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Study of solid carbon source-based graphene growth directly on SiO2 substrate with Cu or Cu/Ni as the sacrificial catalysts

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Abstract

Herein, we report the results of directly synthesizing wafer-scale graphene on silicon dioxide surface using the photoresist based and Cu and Cu/Ni thin-film coating-assisted chemical vapor deposition method. A systematical investigation of the effects of growth condition, such as temperature, time, and metal catalyst layer of Cu and Cu/Ni, on the growth of graphene have been conducted. Multi-layer graphene films are prone to be grown using the Cu/Ni capping layer, while monolayer graphene films are produced using the Cu capping layer. The results demonstrate that such simple method using solid phase photoresist as carbon feedstock can provide a practical route to realize large-scale and mass production of monolayer graphene on dielectric substrate no need of conventional transfer procedure. It sheds a light on future graphene electronic industry.

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Data availability

The datasets generated during and analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (No. 11774255) and the National Key R&D Program of China (No. 2020YFC2004602).

Funding

Funding was provided by the National Natural Science Foundation of China (Grant Number 11774255) and the National Key R&D Program of China (973 Program) (Grant Number 2020YFC2004602).

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Authors and Affiliations

  1. Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People’s Republic of China

    Shuai Wang, Mengying Li, Zhi Chen, Lirong Zhao, Mei Zhao, Yanqing Ma & Lei Ma

  2. State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People’s Republic of China

    Yanqing Ma

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  1. Shuai Wang
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Wang, S., Li, M., Chen, Z. et al. Study of solid carbon source-based graphene growth directly on SiO2 substrate with Cu or Cu/Ni as the sacrificial catalysts. MRS Communications 13, 34–40 (2023). https://doi.org/10.1557/s43579-022-00308-z

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