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Optical, structural, and electrical characteristics of ZnO films co-doped with Al and In elements for TCO applications

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Abstract

The optical, structural, and electrical characteristics of ZnO films co-doped with Al and In elements are investigated. The films were prepared by spray pyrolysis with a permanent In content and Al concentrations of 0.5–3.5 at.%. The film structure was wurtzite and a transmittance of 89–90% was detected in the visible spectral range. By doping atoms with lower (Al) and larger (In) ion radii compared to Zn, residual stresses are reduced, allowing the self-compensating process to shift toward higher donor concentrations and achieve electrical resistivity of 3.0 × 10−3 Ω cm. Reasons for the non-monotonic changes of characteristics are discussed.

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Data availability

The experimental results presented in this paper are available from the corresponding author upon reasonable request.

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Acknowledgments

The authors acknowledge the support of CONACYT Mexico (pt. 258224) and SIP-IPN, Mexico (pt. 20220210).

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Authors and Affiliations

  1. Instituto Politécnico Nacional, UPIITA, 07320, Mexico City, Mexico

    B. El Filali, I. Ch. Ballardo Rodríguez & J. Douda

  2. Instituto Politécnico Nacional, ESFM, 07738, Mexico City, Mexico

    T. V. Torchynska

  3. Instituto Politécnico Nacional, ESIME Zac., 07738, Mexico City, Mexico

    G. Polupan

  4. V. Lashkaryov Institute of Semiconductor Physics at NASU, Kyiv, 03650, Ukraine

    L. Shcherbyna

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  1. B. El Filali
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Correspondence to T. V. Torchynska.

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The authors declare and confirm that the article is the authors’ original work and they have no conflict of interests: no financial/personal interest or belief that could affect their objectivity.

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Filali, B.E., Torchynska, T.V., Rodríguez, I.C.B. et al. Optical, structural, and electrical characteristics of ZnO films co-doped with Al and In elements for TCO applications. MRS Communications 12, 819–823 (2022). https://doi.org/10.1557/s43579-022-00245-x

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