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Polysilicon TFTs fabricated using poly-tetrasilane ink

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Abstract

In the last decade, cyclopentasilane (CPS) and poly-CPS have been developed as precursors of silicon layer in the fabrication of high-performance polysilicon thin-film transistors (TFTs). Their synthesis, however, has required multiple reactions and high-cost reagents, which has until now created major bottle necks in the supply and development of CPS-based devices. In this report, NMOS and PMOS polysilicon TFTs were fabricated using n-tetrasilane polymerized with novel single-step reaction. TFTs fabricated using poly-TTS-based ink exhibited mobility of approximately 60 cm2 V−1 s−1 for PMOS and 160 cm2 V−1 s−1 for NMOS, which is equivalent to TFTs fabricated using poly-CPS ink.

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The data that support the findings of this study are available within the article.

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Acknowledgments

The authors deeply appreciate the efforts and contributions of the employees at Kovio and Thin Film Electronics, without which this work would not have been possible.

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  1. Thin Film Electronics, Inc., 2581 Junction Avenue, San Jose, CA, 95134, USA

    Mao Ito & Arvind Kamath

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  1. Mao Ito
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  2. Arvind Kamath
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Correspondence to Mao Ito.

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Ito, M., Kamath, A. Polysilicon TFTs fabricated using poly-tetrasilane ink. MRS Communications 12, 124–129 (2022). https://doi.org/10.1557/s43579-022-00152-1

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