Abstract
2D heterostructures offer new opportunities for harnessing a wider range of the solar spectrum in high-performance photovoltaic devices. Here, we explore a type-II p–n heterojunction, by exploiting air-stable tellurene (Te) in combination with MoS2, to study its charge transfer for photovoltaic applications. The charge transfer of MoS2/Te heterojunction is confirmed by photoluminescence spectroscopy, Raman spectroscopy and Kelvin probe force microscopy. The exciton binding energy for MoS2/Te heterojunction is estimated to be around 10 meV, which is much lower than that for monolayer MoS2. This strategy can be exploited to develop next-generation intrinsically ultrathin light-harvesting devices.
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Acknowledgments
The authors are grateful for the financial support of this project by the U.S. National Science Foundation (Awards # 1831133 and #2122044). S.H. acknowledges the support from the National Science Foundation under Grant No. ECCS-1943895. This work was performed in part at the Duke University Shared Materials Instrumentation Facility (SMIF), a member of the North Carolina Research Triangle Nanotechnology Network, which is supported by the National Science Foundation under Grant ECCS-1542015 as part of the National Nanotechnology Coordinated Infrastructure.
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BC conceived the idea and performed device integration, BC, MC, TL and BA carried out the synthesis and characterization, KZ and SH performed low-temperature PL measurements, BC, KZ and SH analyzed the results. All authors reviewed and revised the manuscript. FY supervised the project.
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The data that support the findings of this study are available from the corresponding author upon reasonable request.
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Chitara, B., Zhang, K., Cervantes, M.Y.G. et al. Probing charge transfer in 2D MoS2/tellurene type-II p–n heterojunctions. MRS Communications 11, 868–872 (2021). https://doi.org/10.1557/s43579-021-00117-w
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DOI: https://doi.org/10.1557/s43579-021-00117-w