Abstract
The present work describes the effect of Ni on the structure, gap and electrical resistance of the ZnO semiconductor matrix, produced through the combustion reaction. Furthermore, the influence of temperature on the electrical resistance of \({\text{Zn}}_{1 - x} {\text{Ni}}_{x} {\text{O}}\) (x = 0.05; x = 0.1) systems was evaluated. As they were sintered at 1050°C, electrical resistance sensitivity when thermally stimulated, ranging from 13.865 to 0.897 MΩ its electrical resistance, for the system with x = 0.05 and 3.975 to 0.215 MΩ for x = 0.1 for a variation of temperature between 28 and 120°C. Our results demonstrated the feasibility of producing NTC-type thermistors with the \({\text{Zn}}_{1 - x} {\text{Ni}}_{x} {\text{O}}\) system, obtained through combustion reaction.
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Data availability
The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
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de Lima, W.M.P.A., de Carvalho Filho, L.H., Raimundo, R.A. et al. Production of nickel-doped ZnO-based NTC thermistor via combustion reaction. MRS Communications 11, 650–655 (2021). https://doi.org/10.1557/s43579-021-00091-3
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DOI: https://doi.org/10.1557/s43579-021-00091-3