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High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor

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Abstract

This study investigated a normally-off p-GaN/AlGaN/GaN high electron mobility transistor with the extended p-GaN. The optimized recess depth in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. The influences of recess depth in the AlGaN barrier and the extended length of the p-GaN extension on the threshold voltage (VTH), the maximum drain current (ID,MAX), and breakdown voltage were simulated and studied. The proposed transistor with a 1-μm p-GaN extension and 2-nm recess depth in AlGaN barrier shows improvement on VTH and ID,MAX without degrading the breakdown voltage compared with the device without p-GaN extension.

Graphic abstract

The optimized recess depth (TR) in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics.

Improvement on VTH and ID,MAX without degrading the breakdown voltage.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Central University, Taoyuan City, Taiwan

    S. Krishna Sai & Yue-Ming Hsin

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  1. S. Krishna Sai
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  2. Yue-Ming Hsin
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Correspondence to Yue-Ming Hsin.

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Sai, S.K., Hsin, YM. High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor. MRS Communications 11, 517–522 (2021). https://doi.org/10.1557/s43579-021-00067-3

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  • DOI: https://doi.org/10.1557/s43579-021-00067-3

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