Abstract
In this work, the oxygen containing HfXO (X = S and Se) Janus monolayers are explored using first-principles calculations. Phonon calculations and ab initio molecular dynamic simulations are used to examine their stability. The charge transfer generates a predominant ionic character in HfSO and HfSeO monolayers, which exhibit wide gap semiconductor nature. In addition, efficient approaches are proposed to induce novel features. Specifically, applying external strain may effectively tune the electronic band gap, enhancing significantly the absorption in visible regime. Besides, doping with manganese (Mn) leads to a significant magnetization, where magnetic properties are produced mainly by dopant and its first X neighbor atoms. Feature-rich magnetic semiconductor nature app ears at low doping level. Further studying magnetic properties indicates that the magnetic phase transition may occur depending on the doping configuration. Our work recommends HfXO Janus monolayers as prospective 2D platform materials to be applied in high-performance nanoscale optoelectronic and spintronic devices.
Graphical abstract
Charge density difference (Iso-surface value: 0.01 e/Å3; Aqua surface: Charge depletion; Yellow surface: Charge accumulation) and Bader charge analysis (Arrow indicates the charge transfer direction) of (a) HfSO and (b) HfSeO Janus monolayer.
Similar content being viewed by others
Data availability
Data available on request from the authors.
References
K.S. Novoselov, A.K. Geim, S.V. Morozov, D.-E. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306(5696), 666–669 (2004)
M.J. Allen, V.C. Tung, R.B. Kaner, Honeycomb carbon: a review of graphene. Chem. Rev. 110(1), 132–145 (2010)
D.R. Cooper, B. D’Anjou, N. Ghattamaneni, B. Harack, M. Hilke, A. Horth, N. Majlis, M. Massicotte, L. Vandsburger, E. Whiteway et al., Experimental review of graphene. Int. Sch. Res. Not. 2012, 1–56 (2012)
Y.-W. Son, M.L. Cohen, S.G. Louie, Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97(21), 216803 (2006)
M.Y. Han, B. Ozyilmaz, Y. Zhang, P. Kim, Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98(20), 206805 (2007)
P. Rani, V. Jindal, Designing band gap of graphene by B and N dopant atoms. RSC Adv. 3(3), 802–812 (2013)
T.P. Kaloni, R. Joshi, N. Adhikari, U. Schwingenschlogl, Band gap tunning in BN-doped graphene systems with high carrier mobility. Appl. Phys. Lett. 104(7), 073116 (2014)
M. Pumera, C.H.A. Wong, Graphane and hydrogenated graphene. Chem. Soc. Rev. 42(14), 5987–5995 (2013)
R. Zhao, R. Jayasingha, A. Sherehiy, R. Dharmasena, M. Akhtar, J.B. Jasinski, S.-Y. Wu, V. Henner, G.U. Sumanasekera, In situ transport measurements and band gap formation of fluorinated graphene. J. Phys. Chem. C 119(34), 20150–20155 (2015)
K.K. Kim, A. Hsu, X. Jia, S.M. Kim, Y. Shi, M. Hofmann, D. Nezich, J.F. Rodriguez-Nieva, M. Dresselhaus, T. Palacios et al., Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett. 12(1), 161–166 (2012)
W. Auwärter, H.U. Suter, H. Sachdev, T. Greber, Synthesis of one monolayer of hexagonal boron nitride on Ni (111) from B-trichloroborazine (ClBNH) 3. Chem. Mater. 16(2), 343–345 (2004)
A.H. Woomer, T.W. Farnsworth, J. Hu, R.A. Wells, C.L. Donley, S.C. Warren, Phosphorene: synthesis, scale-up, and quantitative optical spectroscopy. ACS Nano 9(9), 8869–8884 (2015)
W. Zhang, H. Enriquez, Y. Tong, A. Bendounan, A. Kara, A.P. Seitsonen, A.J. Mayne, G. Dujardin, H. Oughaddou, Epitaxial synthesis of blue phosphorene. Small 14(51), 1804066 (2018)
O. Salim, K. Mahmoud, K. Pant, R. Joshi, Introduction to MXenes: synthesis and characteristics. Mater. Today Chem. 14, 100191 (2019)
A. Lipatov, M. Alhabeb, M.R. Lukatskaya, A. Boson, Y. Gogotsi, A. Sinitskii, Effect of synthesis on quality, electronic properties and environmental stability of individual monolayer Ti3C2 MXene flakes. Adv. Electron. Mater. 2(12), 1600255 (2016)
G. Gao, G. Ding, J. Li, K. Yao, M. Wu, M. Qian, Monolayer MXenes: promising half-metals and spin gapless semiconductors. Nanoscale 8(16), 8986–8994 (2016)
S. Manzeli, D. Ovchinnikov, D. Pasquier, O.V. Yazyev, A. Kis, 2D transition metal dichalcogenides. Nat. Rev. Mater. 2(8), 1–15 (2017)
W. Choi, N. Choudhary, G.H. Han, J. Park, D. Akinwande, Y.H. Lee, Recent development of twodimensional transition metal dichalcogenides and their applications. Mater. Today 20(3), 116–130 (2017)
A. Gupta, V. Arunachalam, S. Vasudevan, Liquid-phase exfoliation of MoS2 nanosheets: the critical role of trace water. J. Phys. Chem. Lett. 7(23), 4884–4890 (2016)
R.K. Jha, P.K. Guha, Liquid exfoliated pristine WS2 nanosheets for ultrasensitive and highly stable chemiresistive humidity sensors. Nanotechnology 27(47), 475503 (2016)
S.M. Poh, X. Zhao, S.J.R. Tan, D. Fu, W. Fei, L. Chu, D. Jiadong, W. Zhou, S.J. Pennycook, A.H. Castro Neto et al., Molecular beam epitaxy of highly crystalline MoSe2 on hexagonal boron nitride. ACS Nano 12(8), 7562–7570 (2018)
A. Roy, H.C. Movva, B. Satpati, K. Kim, R. Dey, A. Rai, T. Pramanik, S. Guchhait, E. Tutuc, S.K. Banerjee, Structural and electrical properties of MoTe2 and MoSe2 grown by molecular beam epitaxy. ACS Appl. Mater. Interfaces 8(11), 7396–7402 (2016)
Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J.T.-W. Wang, C.-S. Chang, L.-J. Li et al., Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24(17), 2320–2325 (2012)
B. Liu, M. Fathi, L. Chen, A. Abbas, Y. Ma, C. Zhou, Chemical vapor deposition growth of monolayer WSe2 with tunable device characteristics and growth mechanism study. ACS Nano 9(6), 6119–6127 (2015)
Z. Lin, M.T. Thee, A.L. Elías, S. Feng, C. Zhou, K. Fujisawa, N. Perea-López, V. Carozo, H. Terrones, M. Terrones, Facile synthesis of MoS2 and MoxW1-xS2 triangular monolayers. APL Mater. 2(9), 092514 (2014)
T.J.S. Anand, S. Shariza, A study on molybdenum sulphoselenide (MoSxSe2-x, 0 ≤x ≤2) thin films: growth from solution and its properties. Electrochim. Acta 81, 64–73 (2012)
J. Zhang, S. Jia, I. Kholmanov, L. Dong, D. Er, W. Chen, H. Guo, Z. Jin, V.B. Shenoy, L. Shi et al., Janus monolayer transition-metal dichalcogenides. ACS Nano 11(8), 8192–8198 (2017)
A.-Y. Lu, H. Zhu, J. Xiao, C.-P. Chuu, Y. Han, M.-H. Chiu, C.-C. Cheng, C.-W. Yang, K.-H. Wei, Y. Yang et al., Janus monolayers of transition metal dichalcogenides. Nat. Nanotechnol. 12(8), 744–749 (2017)
L. Hu, D. Wei, Janus group-iii chalcogenide monolayers and derivative type-II heterojunctions as water-splitting photocatalysts with strong visible-light absorbance. J. Phys. Chem. C 122(49), 27795–27802 (2018)
Y. Zhu, X. Wang, W. Mi, Two-dimensional M2SD (M= Ge, Sn; D= Se, Te) monolayers with puckered structure: electronic structure and optical properties. Phys. E. 117, 113802 (2020)
T.V. Vu, N.N. Hieu, Novel Janus group III chalcogenide monolayers Al2XY2 (X/Y= S, Se, Te): first-principles insight onto the structural, electronic, and transport properties. J. Phys.: Condens. Matter 34(11), 115601 (2021)
L. Dong, J. Lou, V.B. Shenoy, Large in-plane and vertical piezoelectricity in Janus transition metal dichalchogenides. ACS Nano 11(8), 8242–8248 (2017)
S.-D. Guo, X.-S. Guo, R.-Y. Han, Y. Deng, Predicted Janus SnSSe monolayer: a comprehensive first-principles study. Phys. Chem. Chem. Phys. 21(44), 24620–24628 (2019)
Z. Wei, J. Tang, X. Li, Z. Chi, Y. Wang, Q. Wang, B. Han, N. Li, B. Huang, J. Li et al., Wafer-scale oxygendoped MoS 2 monolayer. Small Methods 5(6), 2100091 (2021)
J. Tang, Z. Wei, Q. Wang, Y. Wang, B. Han, X. Li, B. Huang, M. Liao, J. Liu, N. Li et al., In situ oxygen doping of monolayer MoS2 for novel electronics. Small 16(42), 2004276 (2020)
V. Van On, D.K. Nguyen, J. Guerrero-Sanchez, D. Hoat, Exploring the electronic band gap of Janus MoSeO and WSeO monolayers and their heterostructures. New J. Chem. 45(44), 20776–20786 (2021)
M. Demirtas, B. Ozdemir, Y. Mogulkoc, E. Durgun, Oxygenation of monolayer gallium monochalcogenides: design of two-dimensional ternary Ga2XO structures (X= S, Se, Te). Phys. Rev. B 101(7), 075423 (2020)
M.J. Varjovi, M. Yagmurcukardes, F.M. Peeters, E. Durgun, Janus two-dimensional transition metal dichalcogenide oxides: first-principles investigation of WXO monolayers with X= S, Se, and Te. Phys. Rev. B 103(19), 195438 (2021)
D.K. Nguyen, J. Guerrero-Sanchez, V. Van On, J. Rivas Silva, R. Ponce-Pérez, G.H. Cocoletzi, D. Hoat, Tuning MoSO monolayer properties for optoelectronic and spintronic applications: effect of external strain, vacancies and doping. RSC Adv. 11(56), 35614–35623 (2021)
N.N. Hieu, H.V. Phuc, A. Kartamyshev, T.V. Vu, Structural, electronic, and transport properties of quintuple atomic janus monolayers Ga2SX2 (X= O, S, Se, Te): first-principles predictions. Phys. Rev. B 105(7), 075402 (2022)
D.K. Nguyen, J. Guerrero-Sanchez, T.V. Vu, R. Ponce Pérez, D. Hoat, Electronic and magnetic properties of the WSO Janus monolayer engineered by intrinsic defects. Surf. Interfaces 32, 102114 (2022)
T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, K. Tsuruta, T. Tanaka, Y. Miyamoto, Few-layer HfS2 transistors. Sci. Rep. 6(1), 1–9 (2016)
H. Kaur, S. Yadav, A.K. Srivastava, N. Singh, S. Rath, J.J. Schneider, O.P. Sinha, R. Srivastava, High-yield synthesis and liquid-exfoliation of two-dimensional beltlike hafnium disulphide. Nano Res. 11(1), 343–353 (2018)
D. Wang, X. Zhang, H. Liu, J. Meng, J. Xia, Z. Yin, Y. Wang, J. You, X.-M. Meng, Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors. 2D Mater. 4(3), 031012 (2017)
R.K. Ulaganathan, R. Sankar, C.-Y. Lin, R.C. Murugesan, K. Tang, F.-C. Chou, High-performance flexible broadband photodetectors based on 2D hafnium selenosulfide nanosheets. Adv. Electron. Mater. 6(1), 1900794 (2020)
R. Yue, A.T. Barton, H. Zhu, A. Azcatl, L.F. Pena, J. Wang, X. Peng, N. Lu, L. Cheng, R. Addou et al., HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy. ACS Nano 9(1), 474–480 (2015)
K. Aretouli, P. Tsipas, D. Tsoutsou, J. Marquez-Velasco, E. Xenogiannopoulou, S. Giamini, E. Vassalou, N. Kelaidis, A. Dimoulas, Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy. Appl. Phys. Lett. 106(14), 143105 (2015)
M. Salavati, Electronic and mechanical responses of two-dimensional HfS2, HfSe2, ZrS2, and ZrSe2 from first-principles. Front. Struct. Civ. Eng. 13(2), 486–494 (2019)
D. Singh, R. Ahuja, Enhanced optoelectronic and thermoelectric properties by intrinsic structural defects in monolayer HfS2. ACS Appl. Energy Mater. 2(9), 6891–6903 (2019)
D. Hoat, R. Ponce-Pérez, T.V. Vu, J. Rivas-Silva, G.H. Cocoletzi, Theoretical analysis of the HfS2 monolayer electronic structure and optical properties under vertical strain effects. Optik 225, 165718 (2021)
D. Wang, X. Zhang, G. Guo, S. Gao, X. Li, J. Meng, Z. Yin, H. Liu, M. Gao, L. Cheng et al., Large-area synthesis of layered HfS2(1–x)Se2x alloys with fully tunable chemical compositions and bandgaps. Adv. Mater. 30(44), 1803285 (2018)
M. Razeghizadeh, M. Pourfath, First principles study on structural, electronic and optical properties of HfS2(1–x)Se2xx and ZrS2(1–x)Se2x ternary alloys. RSC Adv. 12(22), 14061–14068 (2022)
D. Hoat, M. Naseri, N.N. Hieu, R. Ponce-Pérez, J. RivasSilva, T.V. Vu, G.H. Cocoletzi, A comprehensive investigation on electronic structure, optical and thermoelectric properties of the HfSSe Janus monolayer. J. Phys. Chem. Solids 144, 109490 (2020)
J. Bera, A. Betal, S. Sahu, Ultralow lattice thermal conductivity and high thermoelectric performance near room temperature of Janus monolayer HfSSe. arXiv:2003.02439
H. Wang, B. Dai, N.-N. Ge, X.-W. Zhang, G.-F. Ji, High thermoelectric performance of Janus monolayer and bilayer HfSSe. Phys. Status Solidi (B) 259, 2200090 (2022)
M.-Y. Liu, L. Gong, Y. He, C. Cao, Tuning rashba effect, band inversion, and spin-charge conversion of Janus XSn2Y monolayers via an external field. Phys. Rev. B 103(7), 075421 (2021)
R. Ahammed, N. Jena, A. Rawat, M. K. Mohanta, Dimple, A. De Sarkar, Ultrahigh out-of-plane piezoelectricity meets giant rashba effect in 2D Janus monolayers and bilayers of group IV transition-metal trichalcogenides, J. Phys. Chem. C 124(39), 21250–21260 (2020)
M.K. Mohanta, A. Rawat, N. Jena, R. Ahammed, A. De Sarkar et al., Ultra-low lattice thermal conductivity and giant phonon–electric field coupling in hafnium dichalcogenide monolayers. J. Phys.: Condens. Matter 32(31), 315301 (2020)
M. Demirtas, M.J. Varjovi, M.M. Çiçek, E. Durgun, Tuning structural and electronic properties of twodimensional aluminum monochalcogenides: Prediction of Janus Al2XX’(X/X’: O, S, Se, Te) monolayers. Phys. Rev. Mater. 4(11), 114003 (2020)
P. Nandi, A. Rawat, R. Ahammed, N. Jena, A. De Sarkar, Group-IV (A) Janus dichalcogenide monolayers and their interfaces straddle gigantic shear and in-plane piezoelectricity. Nanoscale 13(10), 5460–5478 (2021)
H.L. Zhuang, V.R. Cooper, H. Xu, P. Ganesh, R.G. Hennig, P. Kent, Rashba effect in single-layer antimony telluroiodide SbTeI. Phys. Rev. B 92(11), 115302 (2015)
W.-L. Tao, J.-Q. Lan, C.-E. Hu, Y. Cheng, J. Zhu, H.-Y. Geng, Thermoelectric properties of Janus MXY (M= Pd, Pt; X, Y= S, Se, Te) transition-metal dichalcogenide monolayers from first principles. J. Appl. Phys. 127(3), 035101 (2020)
A. Kandemir, H. Sahin, Janus single layers of In2SSe: A first-principles study. Phys. Rev. B 97(15), 155410 (2018)
L. Ju, M. Bie, X. Tang, J. Shang, L. Kou, Janus WSSe monolayer: an excellent photocatalyst for overall water splitting. ACS Appl. Mater. Interfaces 12(26), 29335–29343 (2020)
A. Rawat, M. K. Mohanta, N. Jena, Dimple, R. Ahammed, A. De Sarkar, Nanoscale interfaces of Janus monolayers of transition metal dichalcogenides for 2D photovoltaic and piezoelectric applications, J. Phys. Chem. C 124(19), 10385–10397 (2020)
Y. Wang, W. Wei, H. Wang, N. Mao, F. Li, B. Huang, Y. Dai, Janus TiXY monolayers with tunable berry curvature. J. Phys. Chem. Lett. 10(23), 7426–7432 (2019)
R. Peng, Y. Ma, B. Huang, Y. Dai, Two-dimensional Janus PtSSe for photocatalytic water splitting under the visible or infrared light. J. Mater. Chem. A 7(2), 603–610 (2019)
N. Jena, A. Rawat, R. Ahammed, M.K. Mohanta, A. De Sarkar et al., Emergence of high piezoelectricity along with robust electron mobility in Janus structures in semiconducting Group IVB dichalcogenide monolayers. J. Mater. Chem. A 6(48), 24885–24898 (2018)
Y. Chen, J. Liu, J. Yu, Y. Guo, Q. Sun, Symmetry breaking induced large piezoelectricity in Janus tellurene materials. Phys. Chem. Chem. Phys. 21(3), 1207–1216 (2019)
R. Li, J. Jiang, X. Shi, W. Mi, H. Bai, Two-dimensional Janus FeXY (X, Y= Cl, Br, and I, X 6= Y) monolayers: Half-metallic ferromagnets with tunable magnetic properties under strain. ACS Appl. Mater. Interfaces 13(32), 38897–38905 (2021)
M.K. Mohanta, A. De Sarkar, Interfacial hybridization of Janus MoSSe and BX (X= P, As) monolayers for ultrathin excitonic solar cells, nano piezotronics and low-power memory devices. Nanoscale 12(44), 22645–22657 (2020)
W. Chen, X. Hou, X. Shi, H. Pan, Two-dimensional janus transition metal oxides and chalcogenides: multifunctional properties for photocatalysts, electronics, and energy conversion. ACS Appl. Mater. Interfaces 10(41), 35289–35295 (2018)
Y.F. Luo, Y. Pang, M. Tang, Q. Song, M. Wang, Electronic properties of Janus MoSSe nanotubes. Comput. Mater. Sci. 156, 315–320 (2019)
F.T. Bölle, A.E. Mikkelsen, K.S. Thygesen, T. Vegge, I.E. Castelli, Structural and chemical mechanisms governing stability of inorganic Janus nanotubes. NPJ Comput. Mater. 7(1), 1–8 (2021)
S. Haastrup, M. Strange, M. Pandey, T. Deilmann, P.S. Schmidt, N.F. Hinsche, M.N. Gjerding, D. Torelli, P.M. Larsen, A.C. Riis-Jensen et al., The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals. 2D Mater. 5(4), 042002 (2018)
M.N. Gjerding, A. Taghizadeh, A. Rasmussen, S. Ali, F. Bertoldo, T. Deilmann, N.R. Knøsgaard, M. Kruse, A.H. Larsen, S. Manti et al., Recent progress of the computational 2D materials database (C2DB). 2D Mater. 8(4), 044002 (2021)
J. Gusakova, X. Wang, L.L. Shiau, A. Krivosheeva, V. Shaposhnikov, V. Borisenko, V. Gusakov, B.K. Tay, Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework (GVJ-2e method). Phys. Status Solidi (A) 214(12), 1700218 (2017)
Q. Zhao, Y. Guo, K. Si, Z. Ren, J. Bai, X. Xu, Elastic, electronic, and dielectric properties of bulk and monolayer ZrS2, ZrSe2, HfS2, HfSe2 from van der Waals density-functional theory. Phys. Status Solidi (B) 254(9), 1700033 (2017)
Q. Alam, M. Idrees, S. Muhammad, C.V. Nguyen, M. Shafiq, Y. Saeed, H. Din, B. Amin, Stacking effects in van der waals heterostructures of blueP and Janus XYO (X= Ti, Zr, Hf: Y= S, Se) monolayers. RSC Adv. 11(20), 12189–12199 (2021)
W. Luo, Y. Ma, X. Gong, H. Xiang, Prediction of silicon-based layered structures for optoelectronic applications. J. Am. Chem. Soc. 136(45), 15992–15997 (2014)
M. Gajdoˇs, K. Hummer, G. Kresse, J. Furthmüller, F. Bechstedt, Linear optical properties in the projectoraugmented wave methodology. Phys. Rev. B 73(4), 045112 (2006)
B. Mortazavi, B. Javvaji, F. Shojaei, T. Rabczuk, A.V. Shapeev, X. Zhuang, Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi 2N 4 family confirmed by first-principles. Nano Energy 82, 105716 (2021)
E.C. Ahn, 2D materials for spintronic devices. NPJ 2D Mater. Appl. 4(1), 1–14 (2020)
Y. Liu, C. Zeng, J. Zhong, J. Ding, Z.M. Wang, Z. Liu, Spintronics in two-dimensional materials. Nano-Micro Lett. 12(1), 1–26 (2020)
P. Sharma, A. Gupta, F.J. Owens, A. Inoue, K.V. Rao, Room temperature spintronic material-Mn-doped ZnO revisited. J. Magn. Magn. Mater. 282, 115–121 (2004)
A. Krivosheeva, V. Shaposhnikov, V. Lyskouski, V. Borisenko, F.A. d’Avitaya, J.-L. Lazzari, Prospects on Mn-doped ZnGeP2 for spintronics. Microelectron. Reliab. 46(9–11), 1747–1749 (2006)
Y. Mao, J. Zhong, Structural, electronic and magnetic properties of manganese doping in the upper layer of bilayer graphene. Nanotechnology 19(20), 205708 (2008)
A. Ramasubramaniam, D. Naveh, Mn-doped monolayer MoS2: an atomically thin dilute magnetic semiconductor. Phys. Rev. B 87(19), 195201 (2013)
A. Ali, J.-M. Zhang, I. Muhammad, X.-M. Wei, I. Ahmad, M.U. Rehman, Changing the electronic and magnetic properties of monolayer HfS2 by doping and vacancy defects: Insight from first-principles calculations. Phys. Status Solidi (B) 257(6), 1900768 (2020)
G. Kresse, J. Furthmüller, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6(1), 15–50 (1996)
G. Kresse, J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54(16), 11169 (1996)
W. Kohn, L.J. Sham, Self-consistent equations including exchange and correlation effects. Phys. Rev. 140(4A), A1133 (1965)
J.P. Perdew, K. Burke, M. Ernzerhof, Generalized gradient approximation made simple. Phys. Rev. Lett. 77(18), 3865 (1996)
J. Heyd, G.E. Scuseria, M. Ernzerhof, Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118(18), 8207–8215 (2003)
S.L. Dudarev, G.A. Botton, S.Y. Savrasov, C. Humphreys, A.P. Sutton, Electron-energy-loss spectra and the structural stability of nickel oxide: an LSDA+U study. Phys. Rev. B 57(3), 1505 (1998)
Y. Wang, S. Li, J. Yi, Transition metal-doped tin monoxide monolayer: a first-principles study. J. Phys. Chem. C 122(8), 4651–4661 (2018)
H.J. Monkhorst, J.D. Pack, Special points for Brillouinzone integrations. Phys. Rev. B 13(12), 5188 (1976)
Acknowledgements
Calculations were performed in the high-performance computing cluster (HPCC) of Thu Dau Mot University (TDMU) and DGCTIC-UNAM Supercomputing Center (projects LANCAD-UNAM-DGTIC-368 and LANCADUNAM-DGTIC-390).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Supplementary Information
Below is the link to the electronic supplementary material.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Nguyen, D.K., Guerrero-Sanchez, J. & Hoat, D.M. HfXO (X = S and Se) Janus monolayers as promising two-dimensional platforms for optoelectronic and spintronic applications. Journal of Materials Research 38, 2600–2612 (2023). https://doi.org/10.1557/s43578-023-00989-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/s43578-023-00989-9