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Diffusion-assisted metallic invasion into graphene oxide layer in metal/graphene oxide/metal structures

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  • FOCUS ISSUE: Structure-Property Relationships in Emerging Two-dimensional Materials
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Abstract

Diffusion of metallic content into graphene oxide (GO) thin film layers prepared over metallic surfaces is demonstrated in GO/metal (M1 = ITO, Al, Au) and metal (M2 = Al, Au)/GO/M1 = ITO, Al, Au) device structures. Depth profile XPS provides the presence of metallic content identical to the metal contact inside the GO films. The metallic content in GO films is attributed to the diffusion of metal atoms through the defect sites of GO sheets in the M2/GO/M1 structures and dominates the electronic conduction. The temperature-dependent current–voltage (I–V) characteristics provide temperature coefficient of resistance (\(\alpha )\) equivalent to the metallic contact, suggesting the diffusion of metallic contents into the GO films and connecting both electrodes. The I–V measurements in combination with XPS measurements suggest migration of Al or Au atoms from the electrodes through the defect sites of GO to the other electrode and that dominates electrical conduction.

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Acknowledgments

P.S. would like to thank the Council of Science and Industrial Research (CSIR) for providing Ph. D. fellowship. M.S. and S.P.S. gratefully acknowledge the financial support from CSIR Network project NanoSHE (BSC0112). A.K.M. would like to thank the funding sponsored by different agencies including the University Grants Commission (UGC) Grant (Ref. No. 42-758/2013 (SR)) in India, Indo-Taiwan Programme of Cooperation in Science & Technology (GITA/DST/TWN/P-51/2013) initiated by Department of Science and Technology (DST), New Delhi, India, and Fund for Improvement of Science and Technology (FIST) Grant (SR/FST/PSII-024/2011) provided for developing Infrastructure in Higher Educational Institutions in India by DST, New Delhi, India.

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Authors and Affiliations

  1. Department of Physics and Astrophysics, University of Delhi, Delhi, 110007, India

    Pooja Saini, R. P. Tandon & Ajit K. Mahapatro

  2. National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India

    Manjri Singh & Surinder P. Singh

  3. Department of Physics, National Dong-Hwa University, Hualien, 97401, Taiwan

    Ranjit Patil & Yuan-Ron Ma

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  1. Pooja Saini
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Correspondence to Ajit K. Mahapatro.

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Saini, P., Singh, M., Patil, R. et al. Diffusion-assisted metallic invasion into graphene oxide layer in metal/graphene oxide/metal structures. Journal of Materials Research 38, 1832–1842 (2023). https://doi.org/10.1557/s43578-023-00926-w

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