Abstract
The effects of the precursor solution concentration on the physical and electrochemical characteristics of NiFe2O4 films were studied. XRD patterns confirmed the formation of a spinel cubic crystal structure. FE-SEM images showed a mesoporous morphology. EDAX analysis confirmed a nearly stoichiometric deposition. Optical absorption studies confirmed the direct bandgap energies in the range 2.00–2.27 eV. The films deposited with a 0.25 M solution concentration had the minimum room-temperature electrical resistivity (3.39 × 103 Ωcm). Films deposited with a 0.15 M solution had the maximum specific capacitance values, 591 F g−1 at a scan rate of 5 mV s−1 (CV) and 632 F g−1 at a current density of 0.5 A g−1 (GCD). NiFe2O4 films exhibited specific energy and specific power values of 15.22 W h kg−1 and 225 W kg−1, respectively, at a current density of 1 A g−1. Further, these films retained 92.97% of their specific capacitance after 1000 continuous cycles.
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All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by all authors. The first draft of the manuscript was written by VAJ and DAP and AAY commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Jundale, V.A., Patil, D.A. & Yadav, A.A. Physical and electrochemical characteristics of NiFe2O4 thin films as functions of precursor solution concentration. Journal of Materials Research 38, 439–449 (2023). https://doi.org/10.1557/s43578-022-00829-2
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DOI: https://doi.org/10.1557/s43578-022-00829-2