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Facile fabrication of defect-induced 2D-stanene/stanene-oxide nano-sheet structure material through etching of SnOx thin film by the process of successive Ar+ ion sputtering

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  • Focus Issue: In-situ Study of Materials Transformation
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Abstract

In-situ Ar+-ion etching process is used to extract the defect-induced ultrathin 2D-stanene/stanene-oxide structured nano-materials from transparent conducting tin-dioxide (SnOx) thin films by KRATOS SUPRA spectrometer measurement system. In each etch- cycle during in situ successive Ar+-ion sputtering process, x-ray photoelectron (XPS) and ultraviolet photoemission spectroscopy (UPS) were measured and confirmed the formation of different crystal structures of defect-induced 2D-stanene and/or 2D-stanene oxide ultra-thin films. In situ XPS and UPS spectral results confirmed the formation of different defect-induced oxidation states of “Sn” and their change of density of states, valence band maximum and work functions of the extracted defect-induced ultra-thin 2D-stanene/stanene-oxide films. During etching process (τetch = 0–4000 s) the thickness is changes from 200 nm (SnOx) → ≈2.5 nm (2D-Stanene). These results, further revealed with the ex-situ Raman spectra measurements, where we have observed that the 2D-stanene/stanene-oxide is extracted from SnOx thin films by this successive Ar+-ion etching process. This process provides an option to realize aggressively scaled nanostructure device-based 2D-stanene/stanene-oxide materials with high-precision control that could be useful for fabrication of future electronic devices.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgments

Prof. Ray (S.C.R.) gratefully acknowledge the financial support received from the National Research Foundation (NRF), South Africa (Grant No. EQP13091742446) for purchasing the KRATOS AXIS Supra* XPS spectrometer equipment that installed in 2014 at the University of South Africa (UNISA), Florida Science Campus, South Africa.

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  1. Department of Physics, CSET, University of South Africa, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Private Bag X6, Johannesburg, South Africa

    Sekhar C. Ray

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Ray, S.C. Facile fabrication of defect-induced 2D-stanene/stanene-oxide nano-sheet structure material through etching of SnOx thin film by the process of successive Ar+ ion sputtering. Journal of Materials Research 37, 1164–1171 (2022). https://doi.org/10.1557/s43578-021-00457-2

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