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High thermal stability of doped oxide semiconductor for monolithic 3D integration

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Abstract

The amorphous oxide semiconductor InGaZnO (a-IGZO) has attracted much attention due to the wide band gap, the high carrier mobility, and low-temperature process for its thin film fabrication. Although the oxide semiconductor is popularly utilized as a thin-film transistor in display technology, its characteristics are also suitable for application to back-end-of-line (BEOL) transistors in a large-scale integration (LSI) process. Recently, it was reported that fluorine doping to a-IGZO improves its thermal stability (i.e., suppresses oxygen vacancy [VO] formation) against forming gas (N2/H2) annealing required for BEOL transistors. This article elucidates an atomistic impact of the F doping to a-IGZO by means of first-principles calculations. By investigating atomistic structures of a-IGZO with and without F, we suggest that reduction of the atomic coordination number in F-doped a-IGZO is a key factor to suppress VO formation. As the impact on the electronic structure, F atoms do not alter the carrier diffusion path (i.e., conduction band minimum) in the oxide semiconductor; thus, the high carrier mobility is not deteriorated. However, heavy F doping induces in-gap trap states by forming metal–metal bonds. These impacts of anion F doping are clearly distinguished from those of cation metal doping.

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Acknowledgments

The authors acknowledge the contributions of Dr. S. Zheng and Dr. H. Fujiwara for their efforts on FET experiments. They are also grateful to Mr. T. Enda and Dr. M. Saitoh for helpful comments and discussions on this work.

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Authors and Affiliations

  1. Institute of Memory Technology Research & Development, Kioxia Corporation, Yokkaichi-shi, Japan

    Hiroki Kawai

  2. Institute of Memory Technology Research & Development, Kioxia Corporation, Yokohama-shi, Japan

    Junji Kataoka, Nobuyoshi Saito, Tomomasa Ueda, Takamitsu Ishihara & Keiji Ikeda

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  1. Hiroki Kawai
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  2. Junji Kataoka
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  3. Nobuyoshi Saito
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Correspondence to Hiroki Kawai.

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Kawai, H., Kataoka, J., Saito, N. et al. High thermal stability of doped oxide semiconductor for monolithic 3D integration. MRS Bulletin 46, 1044–1052 (2021). https://doi.org/10.1557/s43577-021-00230-0

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