Structural and Chemical Analysis of Nanoscale Resistive Switching Devices: Assessment on Nonlinear Properties

Abstract

Investigation into the phenomenon of resistive switching, a reversible change in electrical resistance by the application of a voltage bias, has given rise to the device fabrication, DC electrical testing, and cross sectional TEM/EELS characterization of nanoscale resistive switching devices. Typically, resistive switching devices are composed of a thin oxide layer between two conductive electrodes where applied bias can alter the resistance states. In a cross-bar array, nonlinearity of device I-V relation is a highly desirable characteristic that helps to mitigate the sneak path current leakage issue. Negative differential resistance (NDR) switching behavior offers such nonlinearity and has been observed in TaO_x nanoscale devices utilizing certain electrode materials. To investigate this phenomenon, nanodevices were fabricated by sputtering TaO_x onto TiN nanovias capped Nb electrodes. Cross sectional TEM/EELS were performed to reveal the physical and chemical changes in these devices to explore possible origins of nonlinear behavior when these top electrode materials are utilized with TaO_x films.