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Wafer bonding of Si for hybrid photonic devices

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Abstract

InP membranes have been bonded both oxide free and oxide mediated onto a Si substrate. The mechanical responses of the obtained thin (0.4 µm) membranes could be tested by nanoindentation and compared. Delamination of the membrane was observed to occur when the indenting load reached 55 mN for an oxide mediated bonded structure and 80 mN for an oxide free bonded one. Weibull analysis of these events yielded a modulus m of magnitude 6 to 10, indicating that delamination fracture is relatively predictable with a stronger interface obtained in oxide free approach. Delamination of the membrane is the result of constraint of plastic flow by the InP/Si interface. Membrane rotation is induced and increases with the indentation load, until it is sufficient to induce and propagate an interfacial crack.

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Acknowledgments

The authors would like to acknowledge G. Beaudoin for support with the epitaxy. This work has been granted by the French Agency for Research (ANR) through the project entitled COHEDIO (ANR-2011- NANO-024-02).

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Authors and Affiliations

  1. Institut P’, CNRS - Université de Poitiers - ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962, Futuroscope-Chasseneuil Cedex, France

    Eric Le Bourhis & Konstantin Pantzas

  2. Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460, Marcoussis, France

    Konstantin Pantzas, Gilles Patriarche, Anne Talneau & Isabelle Sagnes

  3. Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré, 59652, Villeneuve d’Ascq cedex, France

    David Troadec

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  1. Eric Le Bourhis
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  2. Konstantin Pantzas
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  3. Gilles Patriarche
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  4. Anne Talneau
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  5. Isabelle Sagnes
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  6. David Troadec
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Le Bourhis, E., Pantzas, K., Patriarche, G. et al. Wafer bonding of Si for hybrid photonic devices. MRS Online Proceedings Library 1748, 1–6 (2014). https://doi.org/10.1557/opl.2014.928

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  • DOI: https://doi.org/10.1557/opl.2014.928

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