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Electrical and Structural Properties of Ta-doped SnO2 Transparent Conductive Thin Films by Pulsed Laser Deposition

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Abstract

We investigated electrical and structural properties of Ta-doped SnO2 (TTO) films on anatase TiO2 seed layers with various growth parameters of pulsed laser deposition. We found that anatase TiO2 seed layers induced pseudo-epitaxial (100) growth of TTO films with enhanced mobility (μ) in a wide range of growth parameters. The highest μ of 83 cm2V-1s-1 [resistivity (ρ) of 2.8 × 10-4 Ωcm] and the lowest ρ of 1.8 × 10-4 Ωcm (μ of 60 cm2V-1s-1) were obtained at a substrate temperature of 600 °C. Amorphization and (101)-preferred growth competed with (100) growth on the TiO2 seed layer at low temperatures. Introducing sufficient process oxygen suppressed such unwanted film growth, resulting in improved transport properties.

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Authors and Affiliations

  1. Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki, Kanagawa, 213-0012, Japan

    Shoichiro Nakao, Yasushi Hirose & Tetsuya Hasegawa

  2. Japan Science and Technology Agency, CREST 7-3-1, Hongo, Tokyo, 113-0033, Japan

    Shoichiro Nakao, Yasushi Hirose & Tetsuya Hasegawa

  3. Department of Applied Chemistry, Chubu University, 1200 Matsumoto, Kasugai, Aichi, 487-8501, Japan

    Naoomi Yamada

  4. Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Tokyo, 113-0033, Japan

    Yasushi Hirose & Tetsuya Hasegawa

Authors
  1. Shoichiro Nakao
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  2. Naoomi Yamada
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  3. Yasushi Hirose
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  4. Tetsuya Hasegawa
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Nakao, S., Yamada, N., Hirose, Y. et al. Electrical and Structural Properties of Ta-doped SnO2 Transparent Conductive Thin Films by Pulsed Laser Deposition. MRS Online Proceedings Library 1604, 6345 (2013). https://doi.org/10.1557/opl.2014.332

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  • DOI: https://doi.org/10.1557/opl.2014.332

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