An experimental investigation about the thermoelectric properties of heavily doped p ad n-type nanocrystalline silicon nanowires (NWs) is described. The NWs are produced with low cost CMOS compatible processes, highly customizable in terms of cross-section and placement, which enables the fabrication of both stacked NWs in nearly vertical arrays within nanostructured templates built with SiO2/Si3N4 thin films and individual, freestanding NWs suited for thermal conductivity measurements. The cross-section dimensions of the investigated NWs range between 30 and 120 nm in size and up to about 2 cm in length. The structure of the NWs, as shown by SEM/TEM observations, is nanocrystalline with average size of the nanocrystals in one dimension that is comparable with the nanowire diameter. On the NWs, Seebeck coefficient, electrical resistivity and thermal conductivity have been measured, yielding thermoelectric figure of merit (ZT) values of 0.2 at 300 K for the best case.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
A. I. Hochbaum et al., Nature, vol. 451, pp. 163–168 (2008).
G. F. Cerofolini, M. Ferri, E. Romano, et al., Semiconductor Science and Technology, vol. 25, p. 095011 (2010).
M. Ferri, F. Suriano, A. Roncaglia, S. Solmi, G. F. Cerofolini, E. Romano, D. Narducci, Microelectronic Engineering, vol. 88, pp. 877–881 (2011).
G. F. Cerofolini, M. Ferri, E. Romano, et al., Semiconductor Science and Technology, vol. 26, p. 045005 (2011).
L. Lu, W. Yi, D. L. Zhang, Review of Scientific Instruments, vol. 7, pp. 2996–3003 (2000).
About this article
Cite this article
Suriano, F., Ferri, M., Solmi, S. et al. Thermoelectric Properties of p and n-type Nanocrystalline Silicon Nanowires with High Doping Levels. MRS Online Proceedings Library 1408, 67–72 (2012). https://doi.org/10.1557/opl.2012.37