Abstract
Multi-junction III–V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Wiemer, V. Sabnis, H. Yuen, Proceedings of SPIE, 8108, 810804–1 (2011).
J. F. Geisz, D. J. Friedman, J. S. Ward, A. Duda, W. J. Olavarria, T. E. Moriarty, J. T. Kiehl, M. J. Romero, A. G. Norman, and K. M. Jones, J. Appl. Phys. 93, 123505 (2008).
David B. Jackrel, Seth R. Bank, Homan B. Yuen, Mark A. Wistey, and James S. Harris, Aaron J. Ptak, Steven W. Johnston, Daniel J. Friedman, and Sarah R. Kurtz, J. Appl. Phys. 101, 114916 (2007).
Y. Sin, S. LaLumondiere, W. T. Lotshaw, S. C. Moss, T. Garrod, T. W. Kim, J. Kirch, L. J. Mawst, Proceedings of SPIE, 7933, 79330H (2011).
K. E. Lee and E. A. Fitzgerald, J. Crystal Growth 312, 2010.
F. Dimroth, A. Howard, J. K. Shurtleff, and G. B. Stringfellow, J. Appl. Phys. 91, p. 3687–3692, 2002.
T. W. Kim, T. J. Garrod, K. Kim, J. J. Lee, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, T. F. Kuech, Rao Tatavarti, and L. J. Mawst, Appl. Phys. Lett. 100, 121120 (2012).
S. W. Johnston, R. K. Ahrenkiel, D. J. Friedman, and S. R. Kurtz, Twenty-Ninth IEEE PVSC, pp. 1023–1026, 2002.
D. J. Friedman, J. F. Geisz, W. K. Metzger, and S. W. Johnston, Appl. Phys. Lett. 83, p. 698–700, 2003.
S. B. Zhang and S. H. Wei, Phys. Rev. Lett. 86, p.1789, 2001.
Acknowledgments
The work described in this paper was performed as part of The Aerospace Corporation’s Sustained Experimentation and Research for Program Applications (SERPA) and the authors at The Aerospace Corporation are grateful to Miles Brodie for his help in TEM sample preparation. The work at UW-Madison was supported by the Army Research Laboratory (ARL) under contract number W911NF-09-2-0008 and NSF CEMRI.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sin, Y., LaLumondiere, S., Foran, B. et al. Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells. MRS Online Proceedings Library 1493, 67–73 (2012). https://doi.org/10.1557/opl.2012.1705
Published:
Issue Date:
DOI: https://doi.org/10.1557/opl.2012.1705