Abstract
In this paper we report on the fabrication of n-doped ZnO and semiconducting n-ZnO at room temperature by a new ablation deposition technology that makes use of electron/plasma ablation sources named Pulsed Plasma Deposition (PPD) developed by Organic Spintronics Srl.
The oxygen vacancies n-doped ZnO PPD grown thin film is deposited on PET and shows a resistivity of 3 × 10−4ohm cm. The n-ZnO TCO is compact, smooth and highly transparent in the UV-VIS (better than 90 T%) as well as in the near IR spectral range and it is remarkably temperature stable. Typical ZnO deposition rate of the PPD is 500 nm/min.
The RT deposited semiconductor ZnO shows a very large Hall electron mobility up to 1000 cm2/Vs approaching that of the single crystal. Preliminary results of Si/SiO2 based bottom gate and contact FET test pattern structures with a 50 nm overlaying ZnO thin film shows an ON/OFF ratio of 50000 and a FET mobility of 1 cm2/Vs. Further implementation on appropriate FET design will be performed to explore the possibility to achieve a larger FET mobility. The PPD proves to be an enabling technology that makes it possible the advent of flexible OLED displays.
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Acknowledgments
This work was supported by the European Union Seventh Framework Programme FP7/2007-2013 under grant n°. NMP3-LA-2010-246102, project IFOX (Interfacing Oxides).
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Neri, A., Lotti, R., Yarmolich, D. et al. Room Temperature Deposition of Highly Transparent n-ZnO on PET and ZnO Semiconductor FET. MRS Online Proceedings Library 1436, 40–45 (2012). https://doi.org/10.1557/opl.2012.1509
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DOI: https://doi.org/10.1557/opl.2012.1509