Abstract
The unique structure and properties of graphene initiated broad fundamental and technological research, and highlighted graphene as a new candidate for various applications such as energy storage, solar cells and electronic devices. Chemical vapor deposition (CVD) has been utilized for industrial large-scale synthesis of graphene. Regardless of the synthesis process, graphene should be transferred to arbitrary substrates for different applications. The transfer processes, introduce defects such as wrinkles and cracks in graphene which compromise the properties and applications. In recent years, fundamental research has been focused on characterization of graphene to develop new techniques for large-scale, high-resolution graphene metrology. Herein, a complementary high throughput metrology technique using fluorescent quenching is further investigated for different fluorescent dyes to characterize CVD synthesized graphene.
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Acknowledgments
We gratefully acknowledge financial support for this work by the Riverside Public Utilities, the CMMI Division of the National Science Foundation (Award: 0800680), the Materials Research Science and Engineering Center (NSF-MRSEC) on Polymers (Award: 0213695), the Winston Chung Global Energy Center at UCR, and the Nanoscale Science and Engineering Center (NSF-NSEC) on hierarchical manufacturing (CHM, Award: 0531171).
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Bay, H.H., Ghazinejad, M., Penchev, M. et al. Graphene Metrology Using Fluorescence Quenching of Different Fluorescent Dyes. MRS Online Proceedings Library 1451, 51–56 (2012). https://doi.org/10.1557/opl.2012.1454
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DOI: https://doi.org/10.1557/opl.2012.1454