Skip to main content

Epitaxy of Single Crystal Phase Change Materials on Si(111)


Phase change materials along the GeTe-Sb2Te3 pseudobinary line (GST) are grown by molecular beam epitaxy (MBE) on Si(111). The growth on (111) oriented substrates leads to greatly increased crystal quality compared to (001) oriented substrates, even for a high lattice mismatch. This holds true even for Si substrates which have a lattice mismatch of around 10% with respect to GST. The growth is controlled in situ via line of sight quadrupole mass spectrometer (QMS). Structural characterization is performed in situ by X-ray diffraction (XRD), which reveals a clear cubic symmetry of the film and a lattice slightly rhombohedrally distorted along the [111] direction.

This is a preview of subscription content, access via your institution.


  1. 1.

    M. Wuttig, and N. P. Yamada. Nature Mater. 6, 824–832 (2007).

    CAS  Article  Google Scholar 

  2. 2.

    W. Braun, R. Shayduk, T. Flissikowski, M. Ramsteiner, H. T. Grahn, H. Riechert, P. Fons, and A. Kolobov, Appl. Phys. Lett. 94, 041902 (2009).

    Article  Google Scholar 

  3. 3.

    R. Shayduk, F. Katmis, W. Braun, and H. Riechert, J. Vac. Sci. Technol. B 28 (2010) C3E1.

  4. 4.

    R. Shayduk and W. Braun. J. Cryst. Growth 311, 2215–2219 (2009).

    CAS  Article  Google Scholar 

  5. 5.

    K. Makino, J. Tominaga, and M. Hase. Opt. Express 19,1260–1270 (2011).

    CAS  Article  Google Scholar 

  6. 6.

    H. Grube and J. J. Boland. Surface Science 407, 152–161 (1998).

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to P. Rodenbach.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Rodenbach, P., Perumal, K., Katmis, F. et al. Epitaxy of Single Crystal Phase Change Materials on Si(111). MRS Online Proceedings Library 1338, 510 (2011).

Download citation