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Epitaxy of Single Crystal Phase Change Materials on Si(111)

MRS Online Proceedings Library volume 1338, Article number: 510 (2011) Cite this article

Abstract

Phase change materials along the GeTe-Sb2Te3 pseudobinary line (GST) are grown by molecular beam epitaxy (MBE) on Si(111). The growth on (111) oriented substrates leads to greatly increased crystal quality compared to (001) oriented substrates, even for a high lattice mismatch. This holds true even for Si substrates which have a lattice mismatch of around 10% with respect to GST. The growth is controlled in situ via line of sight quadrupole mass spectrometer (QMS). Structural characterization is performed in situ by X-ray diffraction (XRD), which reveals a clear cubic symmetry of the film and a lattice slightly rhombohedrally distorted along the [111] direction.

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Authors and Affiliations

  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117, Berlin, Germany

    P. Rodenbach, K. Perumal, F. Katmis, W. Braun, R. Calarco & H. Riechert

  2. CreaTec Fischer Co. GmbH, Industriestr. 9, 74391, Erligheim, Germany

    W. Braun

Authors
  1. P. Rodenbach
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  2. K. Perumal
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  3. F. Katmis
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  4. W. Braun
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  5. R. Calarco
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  6. H. Riechert
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Rodenbach, P., Perumal, K., Katmis, F. et al. Epitaxy of Single Crystal Phase Change Materials on Si(111). MRS Online Proceedings Library 1338, 510 (2011). https://doi.org/10.1557/opl.2011.989

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  • DOI: https://doi.org/10.1557/opl.2011.989