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Ion Irradiation on Phase Change Materials

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Abstract

Ion irradiation with 130 keV Ge+ or 120 keV Sb+ has modified, by thermal spike effect, the local atomic arrangement in the structure of as-deposited sputtered amorphous GeTe and Ge2Sb2Te5 thin films. The changes in the local order have been analyzed by Raman and EXAFS spectroscopy. In addition the crystallization kinetic, measured by “in situ” time resolved reflectivity and optical microscope analysis, is found to be faster in the irradiated samples. The nucleation rate and the grain growth velocity are enhanced by a factor of about ten with respect to the unirradiated samples in the investigated temperature range ( 120°C -170°C).

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Authors and Affiliations

  1. IMM-CNR, Catania, Italy

    Emanuele Rimini, Corrado Bongiorno, Giuseppe D’Arrigo & Corrado Spinella

  2. Dipartimento di Fisica e Astronomia, Università di Catania, Italy

    Egidio Carria, Antonio Massimiliano Mio, Santo Gibilisco & Maria Grazia Grimaldi

  3. MATIS-IMM-CNR, Catania, Italy

    Egidio Carria, Maria Miritello, Santo Gibilisco & Maria Grazia Grimaldi

  4. ESRF GILDA CRG, CNR, IOM OGG, Grenoble, F-38043, France

    Francesco D’Acapito

Authors
  1. Emanuele Rimini
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  2. Egidio Carria
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  3. Antonio Massimiliano Mio
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  4. Maria Miritello
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  5. Santo Gibilisco
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  6. Corrado Bongiorno
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  7. Giuseppe D’Arrigo
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  8. Corrado Spinella
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  9. Francesco D’Acapito
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  10. Maria Grazia Grimaldi
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Rimini, E., Carria, E., Mio, A.M. et al. Ion Irradiation on Phase Change Materials. MRS Online Proceedings Library 1354, 606 (2011). https://doi.org/10.1557/opl.2011.1211

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  • DOI: https://doi.org/10.1557/opl.2011.1211

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