Abstract
Ion implantation of germanium and carbon ions into thin films of Ge2Sb2Te5 (GST) and GeTe was applied to modify the properties of these phase change materials. It was found that it is possible to amorphize crystalline GST and GeTe using ion implantation for optimized ion doses and energies which depend on the film thickness, ion species and capping layer. A relatively low minimum dose is required for complete amorphization as judged by the absence of diffraction peaks in x-ray diffraction (XRD) scans. It is 4–5×1013 cm−2 for germanium implantation into GST, and slightly higher (1014 cm−2) for germanium implantation into GeTe. The properties of the re-amorphized films depend on ion species, dose and energy. The re-crystallization temperature of re-amorphized GST by ion implantation is comparable or higher than as-deposited amorphous GST. Carbon implantation in particular leads to a large increase in the crystallization temperature Tx. A carbon dose of 1016 cm−2 implanted into 20 nm amorphous GST yielded a crystallization temperature of 300 ºC, much higher than the crystallization temperature of 160 ºC we recorded for as-deposited, amorphous GST. Similarly, high dose carbon implantation into amorphous GeTe leads to large increase in Tx. We recorded a shift in Tx from 195 ºC for as-deposited GeTe to 400 ºC for C-implanted GeTe. Crystalline GeTe re-amorphized by a low dose germanium ion implantation exhibits a re-crystallization temperature below Tx of as-deposited amorphous GeTe and Tx increased with the implanted Ge dose to a crystallization temperature above that of unimplanted GeTe. Ion implantation can be regarded an additional tool to create phase change materials with different and improved switching properties that cannot be achieved by conventional sputter deposition.
Similar content being viewed by others
References
M. Wuttig and N. Yamada, Nature Mater. 6, 824 (2007).
S. Raoux, Ann. Rev. Mater. Res., 39, 25 (2009).
S. R. Ovshinsky. Phys. Rev. Lett. 22, 1450 (1968).
L. Shi, in Phase Change Materials: Science and Applications, S. Raoux and M. Wuttig, Eds., Springer, Berlin, Heidelberg, New York, pp. 251 (2009).
N. Yamada, R. Kojima, T. Nishihara, A. Tsuchino, Y. Tomekawa, and H. Kusada, Europ. Phase Change and Ovonic Sci. Symp., Aachen, Germany, September 2009. Online at http://www.epcos.org/library/papers/pdf_2009/Yamada%20et%20al%20100%20GB%20rewritable.pdf
G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, and R. Shenoy, J. Vac. Sci. Technol. B, 28, 223 (2010).
S. Raoux, R. Shelby, B. Munoz, M. Hitzbleck, D. Krebs, M. Salinga, M. Woda, M. Austgen, K.-M. Chung, and M. Wuttig, Europ. Phase Change and Ovonic Science Symp., Prague, Czech Republic, September 2008. Online at http://www.epcos.org/library/papers/pdf_2008/Oral/Raoux.PDF
B.-S. Lee, G. W. Burr, R. M. Shelby, S. Raoux, C. T. Rettner, S. N. Bogle, K. Darmawikarta, S. G. Bishop, and J. R. Abelson, Science 326, 980 (2009).
A. M. Mio, E. Carria, R. De Bastiani, M. Miritello, C. Bongiorno, G. D’Arrigo, C. Spinella, M. G. Grimaldi, and E. Rimini, Mater. Res. Soc. Proc. Vol. 1251, 1251-H02-03 (2010).
S. Raoux, G. M. Cohen, R. M. Shelby, H.-Y. Cheng, A. Madan, J. Ott, and J. L. Jordan-Sweet, Europ. Phase Change and Ovonic Science Symp., Milano, Italy, September 2010. Online at http://www.epcos.org/library/papers/pdf_2010/Oral/D01-Raoux.pdf
S. Raoux, G. M. Cohen, R. M. Shelby, H.-Y. Cheng, and J. L. Jordan-Sweet, Mater. Res. Soc. Symp. Proc. Vol. 1251, 1251-H02-06
E. Rimini, R. De Bastiani, E. Carria, M. G. Grimaldi, G. Nicotra, C. Bongiorno, and C. Spinella, J. Appl. Phys. 105, 123502 (2009).
R. De Bastiani, A. M. Pirro, M. G. Grimaldi, E. Rimini, G. A. Baratta, and G. Strazzulla, Appl. Phys. Lett. 92, 241925 (2008).
P. Fons, H. Osawa, A. V. Kolobov, T. Fukaya, M. Suzuki, T. Uruga, N. Kawamura, H. Tanida, and J. Tominaga, Phys. Rev. B 82, 041203 (2010).
A. Kolobov, P. Fons, and J. Tominaga, MRS Spring Meeting, San Francisco (2011), paper R5.2
A.V. Kolobov, J. Haines, A. Pradel, M. Ribes, P. Fons, J. Tominaga, Y. Katayama, T. Hammouda, and T. Uruga, Phys. Rev. Lett. 97, 035701 (2006).
T. H. Jeong, M. R. Kim, H. Seo, J. W. Park, and C. Yeon, Jpn. J. Appl. Phys. 39, 2775 (2000).
H. Horii, J. H. Yi, J. H. Park, Y. H. Ha, I. G. Baek, S. O. Park, Y. N. Hwang, S. H. Lee, Y. T. Kim, K. H. Lee, U.-I. Chung, and J. T. Moon, Dig. Tech. Papers Symp. VLSI Technol., p. 177 (2003).
T. H. Jeong, H. Seo, K. L. Le, S. M. Choi, S. J. Kim, and S. Y. Kim, Jpn. J. Appl. Phys. 40, 1609 (2001).
M. H. Jang, S. J. Park, D. H. Lim, M.-H. Cho, K. H. Do, D.-H. Ko, and H. C. Sohn, Appl. Phys. Lett. 95, 012102 (2009).
J. K. Olson, H. Li, J. M. Viner, and P. C. Taylor, J. Appl. Phys. 99, 103508 (2006).
B. Liu, T. Zhang, J. Xia, Z. Song, S. Feng, and B. Chen, Semicond. Sci. Technol. 19, L61 (2004).
S. Privatera, E. Rimini, C. Bongiorno, and R. Zonca, Europ. Phase Change and Ovonic Science Symp., Balzers, Liechtenstein, September 2004. Online at http://www.epcos.org/library/papers/pdf_2004/05paper_privitera.pdf
S. Privatera, E. Rimini, and R. Zonca, Appl. Phys. Lett. 85, 3044 (2004).
R. M. Shelby and S. Raoux, J. Appl. Phys. 105, 104902 (2009).
N. Yamada, M. Takao, and M. Takenaga, Proc. SPIE 695, Optical Data Storage II, San Diego, p. 79 (1986).
J. F. Ziegler, J. P. Biersack, and U. Littmark, The stopping and the Range of Ions in Solids, Pergamon New York (1985).
T.-Y. Lee, S.-S. Yim, D. Lee, M.-H. Lee, D.-H. Ahn, and K.-B. Kim, Appl. Phys. Lett. 89, 163503 (2006).
H.-Y. Cheng, S. Raoux, and Y.-C. Chen, J. Appl. Phys. 107, 074308 (2010).
S. Raoux, H.-Y. Cheng, J. Jordan-Sweet, B. Munoz, and M. Hitzbleck, Appl. Phys. Lett. 94, 183114 (2009).
K. Borisenko, Y. Chen, D. J. H. Cockayne, S. A. Song, and H. S. Jeong, Acta Mater. (2011), doi:10.1016/j.actamat.2011.03.057.
W. Czubatyi, T. Lowrey, and S. Kostylev, Europ. Phase Change and Ovonic Sci. Symp., Grenoble, France (2006). Online at http://www.epcos.org/library/papers/pdf_2006/pdf_Invited/Czubatyj.pdf
B.-k. Cheong, J.-h. Jeong, D.-H. Kang, H. J. Jung, T. S. Lee, I. H. Kim, W. M. Kim, and K. S. Lee, US patent 7,632,456, Dec. 15, 2009.
G. Bruns, P. Merkelbach, C. Schlockerman, M. Salinga, M. Wuttig, T. D. Happ, J. B. Philipp, M. Kund, Appl. Phys. Lett. 95, 043108 (2009).
V. Sousa, L. Perniola, A. Fantini, G. Betti Beneventi, E. Gourvest, S. Loubriat, A. Bastard, A. Roule, A. Persico, H. Feldis, A. Toffoli, D. Blanchier, S. Maitrejean, B. Hyot, J. F. Nodin, C. Jahan, G. Reimbold, T. Billon, B. André, B. De Salvo, F. Boulanger, S. Lhostis, P. Mazoyer, D. Bensahel, P. Zuliani, and R. Annunziata, Europ. Phase Change and Ovonic Sci. Symp., Milano, Italy (2010). Online at http://www.epcos.org/library/papers/pdf_2010/Posters/PA11-Sousa.pdf
G. Betti Beneventi, L. Perniola, A. Fantini, D. Blanchier, A. Toffoli, E. Gourvest, S. Maitrejean, V. Sousa, C. Jahan, J. F. Nodin, A. Persico, S. Loubriat, A. Roule, S. Lhostis, H. Feldis, G. Reimbold, T. Billon, B. De Salvo, L. Larcher, P. Pavan, D. Bensahel, P. Mazoyer, R. Annuziata, and F. Boulanger, Proc. Europ. Solid State Device Res. Conf ESSDERC, Ceville, Spain (2010).
G. Cohen, S. Raoux, M. Hopstaken, and S. Maurer, MRS Spring Meeting, San Francisco (2011), paper R5.7.
T. Okabe and M. Nakagawa, J. Non-Cryst. Solids 88, 182 (1986).
S. Raoux, B. Munoz, H.-Y. Cheng, and J. L. Jordan-Sweet, Appl. Phys. Lett. 95, 143188 (2009).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Raoux, S., Cohen, G.M., Hopstaken, M. et al. Properties of Phase Change Materials Modified by Ion Implantation. MRS Online Proceedings Library 1338, 506 (2011). https://doi.org/10.1557/opl.2011.1099
Published:
DOI: https://doi.org/10.1557/opl.2011.1099