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A Study of Phase Transition Behaviors of Chalcogenide Layers Using In-situ AC Impedance Spectroscopy

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Abstract

The electrical properties of chalcogenide thin films, both pristine Ge2Sb2Te5 (GST) and cerium-doped GST (Ce-GST), were investigated by in-situ AC impedance spectroscopy. In conjunction with the brick layer model, the contributions of both the grain and the grain boundary to the phase-transition behaviors of chalcogenide samples could be distinguished; the results illustrated the dominance of the grain boundary in the phase transition process. Moreover, impedance analysis applied to characterize the effects of doping on the phase-transition kinetics yielded results similar to those obtained by conventional methods. Therefore, in-situ AC impedance spectroscopy is a feasible tool for analyzing the phase transitions of chalcogenides.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hseuh Road, Hsinchu, Taiwan, 30010, R.O.C.

    Yin-Hsien Huang, Yu-Jen Huang & Tsung-Eong Hsieh

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  1. Yin-Hsien Huang
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  2. Yu-Jen Huang
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  3. Tsung-Eong Hsieh
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Huang, YH., Huang, YJ. & Hsieh, TE. A Study of Phase Transition Behaviors of Chalcogenide Layers Using In-situ AC Impedance Spectroscopy. MRS Online Proceedings Library 1338, 308 (2011). https://doi.org/10.1557/opl.2011.10712

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  • DOI: https://doi.org/10.1557/opl.2011.10712

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