Abstract
Research in n-channel field-effect transistors based upon III–V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel material in 1–2% compressive strain. The strain modifies the valence band structure, resulting in hole mobilities as high as 1500 cm2/Vs. The next steps toward an ultra-low-power complementary metal oxide semiconductor technology will include development of a compatible insulator technology and integration of n- and p-channel transistors.
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Bennett, B.R., Ancona, M.G. & Boos, J.B. Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors. MRS Bulletin 34, 530–536 (2009). https://doi.org/10.1557/mrs2009.141
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DOI: https://doi.org/10.1557/mrs2009.141