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SiC Bipolar Power Devices

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Abstract

The successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

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  1. T. Paul Chow
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Chow, T.P. SiC Bipolar Power Devices. MRS Bulletin 30, 299–304 (2005). https://doi.org/10.1557/mrs2005.77

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