Abstract
Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market for devices that operate at 5 kV and below.
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Dhar, S., Wang, S., Williams, J.R. et al. Interface Passivation for Silicon Dioxide Layers on Silicon Carbide. MRS Bulletin 30, 288–292 (2005). https://doi.org/10.1557/mrs2005.75
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DOI: https://doi.org/10.1557/mrs2005.75