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Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices

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Abstract

We discuss continuing materials technology improvements that have transformed silicon carbide from an intriguing laboratory material into a premier manufacturable semiconductor technology. This advancement is demonstrated by reduced micropipe densities as low as 0.22 cm−2 on 3-in.-diameter conductive wafers and 16 cm−2 on 100-mm-diameter conductive wafers. For high-purity semi-insulating materials, we confirm that the carbon vacancy is the dominant deep-level trapping state, and we report very consistent cross-wafer activation energies derived from temperature-dependent resistivity.Warm-wall and hot-wall SiC epitaxy platforms are discussed in terms of capability and applications. Specific procedures that essentially eliminate forward-voltage drift in bipolar SiC devices are presented in detail.

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References

  1. Cree Inc. Home Page, www.cree.com (accessed February 2005).

  2. Infineon Technologies AG Home Page, www.infineon.com (accessed February 2005).

  3. M.K. Das, J.J. Sumakeris, M.J. Paisley, and A. Powell, Mater. Sci. Forum 457–460 (2004) p. 1105.

    Article  Google Scholar 

  4. J.J. Sumakeris, M.K. Das, H.McD. Hobgood, S.G. Mueller, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, and C.H. Carter Jr., Mater. Sci. Forum 457–460 (2004) p. 1113.

    Article  Google Scholar 

  5. J.J. Sumakeris, U.S. patent application serial no. 008042 (filed September 22, 2003).

  6. V.F. Tsvetkov, S.T. Allen, H.S. Kong, and C.H. Carter Jr., Inst. Phys. Conf. Ser. No. 142 (IOP, Bristol, UK, 1996) p. 17.

    Google Scholar 

  7. J.A. Lely, Ber. Dt. Keram. Ges. 32 (1955) p. 299.

    Google Scholar 

  8. Yu.M. Tairov and V.F. Tsevtkov, J. Cryst. Growth 43 (1978) p. 209.

    Article  CAS  Google Scholar 

  9. V.F. Tsvetkov, S.T. Allen, H.S. Kong, and C.H. Carter Jr., Inst. Phys. Conf. Ser. No. 142 (IOP, Bristol, UK, 1996) p. 17.

    Google Scholar 

  10. R.A. Stein and P. Lanig, Mater. Sci. Eng. B 11 (1992) p. 69.

    Article  Google Scholar 

  11. D.L. Barrett, J.P. McHugh, H.M. Hobgood, R.H. Hopkins, P.G. McMullin, R.C. Clarke, and W.J. Choyke, J. Cryst. Growth 128 (1993).

  12. A.R. Powell, R.T. Leonard, M.F. Brady, St.G. Müller, V.F. Tsvetkov, H.McD. Hobgood, A.A. Burk, R.C. Glass, and C.H. Carter Jr., Mater. Sci. Forum 457–460 (2004) p. 41.

    Article  Google Scholar 

  13. Novasic exhibit, International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Lyon, France.

  14. X.R. Huang, M. Dudley, W.M. Vetter, W. Huang, W. Si, and C.H. Carter Jr., J. Appl. Crystallog. 32 (1999) p. 516.

    Article  CAS  Google Scholar 

  15. R. Rupp, M. Treu, P. Turkes, H. Beerman, T. Scherg, H. Preis, and H. Cerva, Mater. Sci. Forum 483–485 (2005) p. 925.

    Article  Google Scholar 

  16. H. Tsuhida, I. Kamata, T. Jikimoto, T. Miyangi, and K. Izumi., Mater. Sci. Forum 433–336 (2003) p. 131.

    Article  Google Scholar 

  17. P.G. Neudeck, Mater. Sci. Forum 338–342 (2000) p.1161.

    Article  Google Scholar 

  18. X. Zhang, S. Ha, M. Benamara, M.J. O’Loughlin, J.J. Sumakeris, and M. Skowronski, Appl. Phys. Lett. 85 (2004) p. 5209.

    Article  CAS  Google Scholar 

  19. H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.A. Nilsson, J.P. Bergman, and P. Skytt, Mater. Sci. Forum 353–356 (2001) p. 727.

    Article  Google Scholar 

  20. D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamato, H. Kondo, S. Onda, and K. Takatori, Nature 430 (2004) p. 1009.

    Article  CAS  Google Scholar 

  21. I.G. Ivanov, C. Hallin, A. Henry, O. Kordina, and E. Janzen, J. Appl. Phys. 80 (1996) p. 3504.

    Article  CAS  Google Scholar 

  22. Measurement courtesy of J. Choyke, University of Pittsburgh, Pa.

  23. L. Wang, Mater. Sci. Forum 457–460 (2004) p. 771.

    Article  Google Scholar 

  24. J.R. Jenny, D.P. Malta, St.G. Müller, A.R. Powell, V.F. Tsvetkov, H.McD. Hobgood, R.C. Glass, and C.H. Carter Jr., J. Electron. Mater. 32 (2003) 432.

    Article  CAS  Google Scholar 

  25. J.R. Jenny, D.P. Malta, M.R. Calus, St.G. Müller, A.R. Powell, V.F. Tsvetkov, H.McD. Hobgood, R.C. Glass, and C.H. Carter Jr., J., Mater. Sci. Forum 457-460 (2004) 35.

    Article  Google Scholar 

  26. J.R. Jenny, M. Skowronski, W.C. Mitchel, H.M. Hobgood, R.C. Glass, G. Augustine, and R.H. Hopkins, J. Appl. Phys. 78 (1995) p. 3839.

    Article  CAS  Google Scholar 

  27. J.R. Jenny, M. Skowronski, W.C. Mitchel, H.M. Hobgood, R.C. Glass, G. Augustine, and R.H. Hopkins, Appl. Phys. Lett. 68 (1996) p. 1963.

    Article  CAS  Google Scholar 

  28. N.T. Son, P.N. Hai, and E. Jansen, Phys. Rev. B 63 201201 (2001).

    Article  Google Scholar 

  29. Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, U. Gerstmann, E. Rauls, Z. Hajnal, Th. Frauenheim, and H. Ocerhof, Phys. Rev. B 64 245212 (2001).

    Article  Google Scholar 

  30. B. Shanabrook, W. Carlos, and E. Glaser, private communication.

  31. A.A. Burk, M.J. O’Loughlin, M.J. Paisley, A.R. Powell, M.F. Brady, R.T. Leonard, St.G. Müller, and S.T. Allen, Mater. Sci. Forum 483–485 (2005) p. 137.

    Article  Google Scholar 

  32. O. Kordina, J.-O. Fornell, R. Berge, and R. Nilsson, U.S. Patent 5,695,567 B2 (December 9, 1997).

  33. M. Paisley, J.J. Sumakeris, and O. Kordina, U.S Patent 6,569,250 B2 (May 27, 2003).

  34. H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner, and C. Hallin, Mater. Sci. Forum 389–393 (2002) p. 1259.

    Article  Google Scholar 

  35. J.J. Sumakeris, R. Singh, M.J. Paisley, S.G. Müller, H.M. Hobgood, C.H. Carter Jr., and A.A. Burk Jr., U.S. patent application 20030080842 (filed October 26, 2001).

  36. S. Ha, P. Mieszkowski, M. Skowronski, and L. Rowland, J. Cryst. Growth. 244 (2002) p. 257.

    Article  CAS  Google Scholar 

  37. N. Camara, A. Thuaire, E. Bano, and K. Zekentes, Mater. Sci. Forum 483–485 (2005) p. 773.

    Article  Google Scholar 

  38. J.J. Sumakeris, U.S. patent application serial no. 008042 (filed September 22, 2003).

  39. M. Skowronski, private communication.

  40. H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Izumi, K. Nakayama, R. Ishii, K. Asano, and Y. Sugawara, Mater. Sci. Forum 483–485 (2005) p. 97.

    Article  Google Scholar 

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Authors
  1. J. J. Sumakeris
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  2. J. R. Jenny
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  3. A. R. Powell
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Sumakeris, J.J., Jenny, J.R. & Powell, A.R. Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices. MRS Bulletin 30, 280–286 (2005). https://doi.org/10.1557/mrs2005.74

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