Abstract
After substantial investment in research and development over the last decade, silicon carbide materials and devices are coming of age. The concerted efforts that made this possible have resulted in breakthroughs in our understanding of materials issues such as compensation mechanisms in high-purity crystals, dislocation properties, and the formation of SiC/SiO2 interfaces, as well as device design and processing. The progress accomplished over the last eight years in SiC-based electronic materials is summarized in this issue of MRS Bulletin.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
V. Balakrishna, R.H. Hopkins, G. Augustine, G. Donne, and R.N. Thomas, Inst. Phys. Conf. Ser. 160 (1997) p. 321; J. Giocondi, G.S. Rohreer, M. Skowronski, V. Balakrishna, G. Augustine, H.M. Hobgood, and R.H. Hopkins, J. Cryst. Growth 181 (1997) p. 351; M. Dudley, X.R. Huang, W. Huang, A. Powell, S. Wang, P. Neudeck, and M. Skowronski, Appl. Phys. Lett. 75 (1999) p. 784.
P. Pirouz, Philos. Mag. A 78 (1998) p. 727; T.A. Kuhr, E.K. Sanchez, M. Skowronski, W.M. Vetter, and M. Dudley, J. Appl. Phys. 89 (2001) p. 4625.
J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt, and P. Skytt, Mater. Sci. Forum 353–356 (2001) p. 299.
D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda, and K. Takatori, Nature 430 (2004) p. 1009.
H.M. Hobgood, R.C. Glass, G. Augustine, R.H. Hopkins, J.R. Jenny, M. Skowronski, W.C. Mitchel, and M. Roth, Appl. Phys. Lett. 66 (1995) p. 1364.
O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, Mater. Sci. Forum 338–342 (2000) p. 1247.
J.R. Jenny, S.T.G. Mueller, A. Powell, V.F. Tsvetkov, H.M. Hobgood, R.C. Glass, and C.H. Carter Jr., J. Electron. Mater. 31 (2002) p. 366.
G.Y. Chung, C.C. Tin, R.J. Williams, K. McDonald, M. Di Ventra, S.T. Pantelides, L.C. Feldmann, and R.A. Weller, Appl. Phys. Lett. 76 (2000) p. 1713.
Rights and permissions
About this article
Cite this article
Zolper, J.C., Skowronski, M. Advances in Silicon Carbide Electronics. MRS Bulletin 30, 273–278 (2005). https://doi.org/10.1557/mrs2005.73
Published:
Issue Date:
DOI: https://doi.org/10.1557/mrs2005.73