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The Semiconductor p–n Junction “Ultimate Lamp”

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Abstract

Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.

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References

  1. J. Bardeen and W.H. Brattain, Phys. Rev. 74 (1948) p. 230.

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  2. J. Bardeen and W.H. Brattain, U.S. Patent 2,524,035 (October 3, 1950; filed June 17, 1948).

  3. N. Holonyak Jr., Am. J. Phys. 68 (2000) p. 864.

    Article  Google Scholar 

  4. G.E. Stillman, M.D. Sirkis, J.A. Rossi, M.R. Johnson, and N. Holonyak Jr., Appl. Phys. Lett. 9 (1966) p. 268.

    Article  CAS  Google Scholar 

  5. C.M. Wolfe, N. Holonyak Jr., and G.E. Stillman, Physical Properties of Semiconductors (Prentice Hall, Englewood Cliffs, N.J., 1989)

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Authors
  1. Nick Holonyak Jr.
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Holonyak, N. The Semiconductor p–n Junction “Ultimate Lamp”. MRS Bulletin 30, 515–517 (2005). https://doi.org/10.1557/mrs2005.143

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  • DOI: https://doi.org/10.1557/mrs2005.143

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