Abstract
Semiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.
Similar content being viewed by others
References
H.S.P. Wong, D.J. Frank, P.M. Solomon, C.H.J. Wann, and J.J. Welser, Proc. IEEE, Vol. 87 (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1999) p. 537.
S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. von Molnár, M.L. Roukes, A.Y. Chtchelkanova, and D.M. Treger, Science 294 (2001) p. 1488.
B.T. Jonker, Proc. IEEE, Vol. 91 (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2003) p. 727.
D.P. DiVincenzo, Science 269 (1995) p. 255.
S. Datta and B. Das, Appl. Phys. Lett. 56 (1990) p. 665.
P. Bruno and J. Wunderlich, J. Appl. Phys. 84 (1998) p. 978.
H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, Appl. Phys. Lett. 73 (1998) p. 363.
E.A. de Andrada e Silva and G.C. La Rocca, Phys. Rev. B 59 (1999) p. R15583.
T. Hayashi, M. Tanaka, and A. Asamitsu, J. Appl. Phys. 87 (2000) p. 4673.
Th. Gruber, M. Keim, R. Fiederling, G. Reuscher, W. Ossau, G. Schmidt, L. Molenkamp, and A. Waag, Appl. Phys. Lett. 78 (2001) p. 1101.
T. Koga, J. Nitta, H. Takayanagi, and S. Datta, Phys. Rev. Lett. 88 126601 (2002).
A.F. Morpurgo, J.P. Heida, T.M. Klapwijk, B.J. van Wees, and G. Borghs, Phys. Rev. Lett. 80 (1998) p. 1050.
J. Nitta, F. Meijer, Y. Narita, and H. Takayanagi, Physica E 6 (2000) p. 318.
B.T. Jonker, U.S. Patent No. 5,874,749 (February 23, 1999).
A.G. Petukhov, A.N. Chantis, and D.O. Demchenko, Phys. Rev. Lett. 89 107205 (2002).
D. Hägele, M. Oestreich, W.W. Rühle, N. Nestle, and K. Eberl, Appl. Phys. Lett. 73 (1998) p. 1580.
J.M. Kikkawa and D.D. Awschalom, Nature 397 (1999) p. 139.
J.M. Kikkawa and D.D. Awschalom, Phys. Rev. Lett. 80 (1998) p. 4313.
R.I. Dzhioev, K.V. Kavokin, V.L. Korenev, M.V. Lazarev, B.Ya. Meltser, M.N. Stepanova, B.P. Zakharchenya, D. Gammon, and D.S. Katzer, Phys. Rev. B 66 245204 (2002).
Y.Q. Jia, R.C. Shi, and S.Y. Chou, IEEE Trans. Magn. 32 (1996) p. 4707.
A. Hirohata, Y.B. Xu, C.M. Guertler, J.A.C. Bland, and S.N. Holmes, Phys. Rev. B 63 104425 (2001).
J.E. Hirsch, Phys. Rev. Lett. 83 (1999) p. 1834.
S. Zhang, Phys. Rev. Lett. 85 (2000) p. 393.
F. Meier and B.P. Zakharchenya, Optical Orientation (North-Holland, Amsterdam, 1984).
C. Weisbuch and B. Vinter, Quantum Semiconductor Structures, Chapter 11 (Academic Press, New York, 1991).
J.K. Furdyna and J. Kossut, eds., Diluted Magnetic Semiconductors, Semiconductors, and Semimetals, Vol. 25, edR.K. Willardson and A.C. Beer, series editors (Academic Press, New York, 1988).
M. Jain, Diluted Magnetic Semiconductors (World Scientific, Singapore, 1991).
R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L.W. Molenkamp, Nature 402 (1999) p. 787.
B.T. Jonker, Y.D. Park, B.R. Bennett, H.D. Cheong, G. Kioseoglou, and A. Petrou, Phys. Rev. B 62 (2000) p. 8180.
B.T. Jonker, A.T. Hanbicki, Y.D. Park, G. Itskos, M. Furis, G. Kioseoglou, A. Petrou, and X. Wei, Appl. Phys. Lett. 79 (2001) p. 3098. See also Nature Physics Portal: “Spintronics Quantified,” http://www.nature.com/physics/highlights/6860-3.html (accessed July 2003).
Y.D. Park, B.T. Jonker, B.R. Bennett, G. Itskos, M. Furis, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 77 (2000) p. 3989.
R.M. Stroud, A.T. Hanbicki, Y.D. Park, G. Kioseoglou, A.G. Pethukov, B.T. Jonker, G. Itskos, and A. Petrou, Phys. Rev. Lett. 89 166602 (2002).
T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287 (2000) p. 1019.
T. Dietl, H. Ohno, and F. Matsukura, Phys. Rev. B 63 195205 (2001).
M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, and H. Ohno, Jpn. J. Appl. Phys., Part 2: Lett.40 (2001) p. L1274.
E. Johnston-Halperin, D. Lofgreen, R.K. Kawakami, D.K. Young, L. Coldren, A.C. Gossard, and D.D. Awschalom, Phys. Rev. B 65 041306(R) (2002).
M. Tanaka and Y. Higo, Phys. Rev. Lett. 87 026602 (2001).
S.H. Chun, H.J. Potashnik, K.C. Ku, P. Schiffer, and N. Samarth, Phys. Rev. B 66 100408(R) (2002).
Y.D. Park, A.T. Hanbicki, J.E. Mattson, and B.T. Jonker, Appl. Phys. Lett. 81 (2002) p. 1471.
P.R. Hammar, B.R. Bennett, M.J. Yang, and M. Johnson, Phys. Rev. Lett. 83 (1999) p. 203.
C.-M. Hu, J. Nitta, A. Jensen, J.B. Hansen, and H. Takanayagi, Phys. Rev. B 63 125333 (2001).
S. Gardelis, C.G. Smith, C.H.W. Barnes, E.H. Linfield, and D.A. Ritchie, Phys. Rev. B 60 (1999) p. 7764.
F.G. Monzon, H.X. Tang, and M.L. Roukes, Phys. Rev. Lett. 84 (2000) p. 5022.
B.J. van Wees, Phys. Rev. Lett. 84 (2000) p. 5023.
A.T. Filip, B.H. Hoving, F.J. Jedema, B.J. van Wees, B. Dutta, and S. Borghs, Phys. Rev. B 62 (2000) p. 9996.
G. Schmidt, D. Ferrand, L.W. Molenkamp, A.T. Filip, and B.J. van Wees, Phys. Rev. B 62 (2000) p. R4790.
D.L. Smith and R.N. Silver, Phys. Rev. B 64 045323 (2001).
A. Fert and H. Jaffres, Phys. Rev. B 64 184420 (2001).
Z.G. Yu and M. Flatte, Phys. Rev. B 66 201202(R) (2002).
R.A. de Groot, F.M. Mueller, P.G. van Engen, and K.H.J. Buschow, Phys. Rev. Lett. 50 (1983) p. 2024.
W.E. Pickett and J.S. Moodera, Phys. Today 54 (5) (2001) p. 39.
D. Orgassa, H. Fujiwara, T.C. Schulthess, and W.H. Butler, Phys. Rev. B 60 (1999) p. 13237.
E.I. Rashba, Phys. Rev. B 62 (2000) p. R16267.
R. Meservey and P.M. Tedrow, Phys. Rep. 238 (1994) p. 173.
J.S. Moodera, L.R. Kinder, T.M. Wong, and R. Meservey, Phys. Rev. Lett. 74 (1995) p. 3723.
P. Clark, EE Times (February 9, 2001) p. 14.
M. Ilegems, in The Technology and Physics of Molecular Beam Epitaxy, edited by E.H.C. Parker (Plenum Publishers, New York, 1985) p. 119.
S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981) p. 294.
A.T. Hanbicki, B.T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 80 (2002) p. 1240.
A.T. Hanbicki, O.M.J. van’t Erve, R. Magno, G. Kioseoglou, C.H. Li, B.T. Jonker, G. Itskos, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 82 (2003) p. 4092.
J.D. Albrecht and D.L. Smith, Phys. Rev. B 66 113303 (2002).
H.J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H.-P. Schönherr, and K.H. Ploog, Phys. Rev. Lett. 87 016601 (2001).
M. Ramsteiner, H.Y. Hao, A. Kawaharazuka, H.-J. Zhu, M. Kästner, R. Hey, L. Däweritz, H.T. Grahn, and K.H. Ploog, Phys. Rev. B 66 081304R (2002).
T. Manago and H. Akinaga, Appl. Phys. Lett. 81 (2002) p. 694.
V.N. Motsnyi, J. De Boeck, J. Das, W. Van Roy, G. Borghs, E. Goovaerts, and V.I. Safarov, Appl. Phys. Lett. 81 (2002) p. 265.
M.I. Dyakonov, V.I. Perel, V.L. Berkovits, and V.I. Safarov, Sov. Phys. JETP 40 (1975) p. 950.
R. Landauer, Philos. Mag. 21 (1970) p. 863.
M. Büttiker, Y. Imry, R. Landauer, and S. Pinhas, Phys. Rev. B 31 (1985) p. 6207.
H.U. Baranger and A.D. Stone, Phys. Rev. B 40 (1989) p. 8169.
J.M. MacLaren, X.-G. Zhang, W.H. Butler, and X. Wang, Phys. Rev. B 59 (1999) p. 5470.
S. Sanvito and N.A. Hill, Phys. Rev. Lett. 87 267202 (2001).
O. Wunnicke, Ph. Mavropoulos, R. Zeller, P.H. Dederichs, and D. Grundler, Phys. Rev. B 65 241306(R) (2002)
O. Wunnicke, P. Mavropoulos, and P.H. Dederichs, J. Supercond./Novel Magn. 16 (2003) p. 171.
M. Zwierzycki, K. Xia, P.J. Kelly, G.E.W. Bauer, and I. Turek, Phys. Rev. B 67 092401 (2003).
B.T. Jonker, in Ultrathin Magnetic Structures IV: Spintronics, edited by J.A.C. Bland and B. Heinrich (Springer-Verlag, Berlin) in press.
R.M. Stroud (unpublished).
S.C. Erwin, S.-H. Lee, and M. Scheffler, Phys. Rev. B 65 205422 (2002).
P.C. van Son, H. van Kempen, and P. Wyder, Phys. Rev. Lett. 58 (1987) p. 2271.
K.M. Schep, J.B.A.N. van Hoof, P.J. Kelly, G.E.W. Bauer, and J.E. Inglesfield, Phys. Rev. B 56 (1997) p. 10805.
S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1995).
D.E. Brehmer, K. Zhang, Ch.J. Schwarz, S.-P. Chau, S.J. Allen, J.P. Ibbetson, J.P. Zhang, C.M. Palmstrøm, and B. Wilkens, Appl. Phys. Lett. 67 (1995) p. 1268
A.G. Petukhov, W.R.L. Lambrecht, and B. Segall, Phys. Rev. B 53 (1996) p. 3646.
J.C. Slonczewski, Phys. Rev. B 39 (1989) p. 6995.
M. Jullière, Phys. Lett. 54A (1975) p. 225.
D.A. Stewart and M. van Schilfgaarde, J. Appl. Phys. 93 (2003) p. 7355.
A.G. Petukhov, D.O. Demchenko, and A.N. Chantis, to appear in Phys. Rev. B (2003), preprint available on the arXiv.org archive as http://arXiv.org/abs/cond-mat/0211300(accessed September 2003).
R.R. Marquardt, D.A. Collins, Y.X. Liu, Z.-Y. Ting, and T.C. McGill, Phys. Rev. B 53 (1996) p. 13624.
F. Matsukura, E. Abe, and H. Ohno, J. Appl. Phys. 87 (2000) p. 6442.
X. Chen, M. Na, M. Cheon, S. Wang, H. Luo, B.D. McCombe, X. Liu, Y. Sasaki, T. Wojtowicz, J.K. Furdyna, S.J. Potashnik, and P. Schiffer, Appl. Phys. Lett. 81 (2002) p. 511.
S.A. Crooker, D.A. Tulchinsky, J. Levy, D.D. Awschalom, R. Garcia, and N. Samarth, Phys. Rev Lett. 75 (1995) p. 505
Rights and permissions
About this article
Cite this article
Jonker, B.T., Erwin, S.C., Petrou, A. et al. Electrical Spin Injection and Transport in Semiconductor Spintronic Devices. MRS Bulletin 28, 740–748 (2003). https://doi.org/10.1557/mrs2003.216
Published:
Issue Date:
DOI: https://doi.org/10.1557/mrs2003.216