Abstract
Packaging of solid-state power electronics is a highly interdisciplinary process requiring knowledge of electronics, heat transfer, mechanics, and materials science. Consequently, there are numerous opportunities for innovations at the interfaces of these complementary fields. This article offers a perspective of the current state of the art and identifies six specific areas for materials-based research in power electronics packaging. The emphasis is on identifying the underlying physical relationships that link the performance of the power electronics system to the microstructure and architectural arrangement of the constituents.
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T.M. Jahns and E.L. Owen, IEEE Trans. Power Electron. 16 (1) (2001) p. 17.
P. Wikstrom, A. Terens, and H. Kobi, IEEE Trans. Ind. Appl. 36 (1) (2000).
M.C. Shaw and B.C. Beihoff, in Proc. IEEE, Vol. 89, No. 6, Special Edition on Power Electronics, edited by van J.D. Wyk, F.C. Lee, and D. Boroyevich (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2001).
J. Wilson, Electronics Cooling 8 (1) (2002) p. 14.
R.R. Tummala and E.J. Rymaszewski, Microelectronics Packaging Handbook (Van Nostrand Reinhold, New York, 1989).
H. Taraseisky, Power Hybrid Circuit Design and Manufacture (Marcel Dekker, New York, 1996).
S.M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, 1981).
J.V. Beck, A.M. Osman, and G. Lu, J. Heat Transfer 115 (1993) p. 51.
C. Fu-Y. and C. Ume, JOM (June 1995) p. 31.
J.W. Sofia, IEEE Trans. Components, Packag., Manuf. Technol., Part A 18 (1995) p. 39.
B.M. Guenin, Electronics Cooling 8 (3) (2002).
A. Ammous and B. Allard, IEEE Trans. Power Electron. 13 (1) (1998) p. 12.
W. Nakayama, Appl. Mech. Rev. 39 (12) (1986) p. 1847.
S.D. Garner, Electronics Cooling 2 (3) (1996).
K.S. Sekhon and V.W. Ruwe, in Proc. ISHM Int. Microelectronics Symp. (1984) p. 16.
R. Dethlefsen, A. Egli, and K.T. Feldman, IEEE Trans. Power Appar. Sys. PAS-101 (9) (1982).
M.C. Shaw, J.R. Waldrop, S. Chandrasekaran, B. Kagawala, X. Jing, E.R. Brown, M. Dhir, and M. Fabbeo, in Proc. ITherm Conf. (2002).
D.B. Tuckerman and R..F. Pease, IEEE Electron Device Lett. EDL-2 (5) (1981).
S. Oktay, R. Hannemann, and Bar-A. Cohen, Mech. Eng. 108 (3) (1986) p. 36.
T. Kishimoto and T. Ohsaki, in Proc. 36th Electronic Components Conf. (1986) p. 595.
R.M. Patel, D.K. Wagner, A.D. Danner, K. Fallahpour, and R.S. Stinnet, in Proc. SPIE, Vol. 1634 (SPIE—The International Society for Optical Engineering, Bellingham, WA) p. 466.
E. Vassilakis, T. Fillardet, B. Groussin, V. Carfemel, and C. Carriere, Electron. Lett. 31 (13) (1995) p. 1056.
G.O. Campbell, E.A. Estes, C.V. Hassapis, and M.M. Sherman, in Proc. STAIF-96 Conf. p. 933.
Y. Yamada, H. Itahana, and S. Okada, Hitachi Review 29 (1980) p. 25.
A.G. Evans, J.W. Hutchinson, N.A. Fleck, M.F. Ashby, and H.N.G. Wadley, Prog. Mater. Sci. 46 (2001) p. 309.
Y.C. Lee, W. Zhang, H. Xie, and R. Mahajan, Advances in Electronic Packaging, EEP Vol. 4.1, (Electronic and Photonic Packaging Division, ASME International, New York, 1993).
W.R. Humphries and E.I. Griggs, “A Design Handbook for Phase Change Thermal Control and Energy Storage Devices,” NASA Technical Paper 1074 (National Aeronautics and Space Administration, Washington, DC, November 1977).
D.V. Hale, M.J. Hoover, and M.J. O’Neill, Phase Change Materials Handbook, NASA CR-61363 (National Aeronautics and Space Administration, Washington, DC, September 1971).
A.G. Evans, M.Y. He, J.W. Hutchinson, and M.C. Shaw, J. Electron. Packag. 123 (2001) p. 211.
C.Y. Liu, C. Chen, C.N. Liao, and K.N. Tu, Appl. Phys. Lett. 75 (1) (1999) p. 58.
H. Ye, C. Basaran, D. Hopkins, and A. Cartwright, in Proc. ITherm Conf. (San Diego) p. 946.
W. Wu, M. Held, P. Jacob, P. Scacco, and A. Birolini, in Proc. 7th Int. Symp. on Power Semiconductor Devices and ICs (IPSD ’95) (Yokohama, Japan).
W. Wu, M. Held, P. Jacob, P. Scacco, and A. Birolini, in Proc. 7th Int. Symp. on Power Semiconductor Devices and ICs (IPSD ’95) (Yokohama, Japan).
R. Saito, Y. Koike, A. Tanaka, T. Kushima, H. Shimizu, and S. Nonoyama, in Proc. Int. Symp. on Power Semiconductor Devices (Toronto, Canada, 1999).
G. LeFranc, T. Licht, H.J. Schultz, R. Beinert, and G. Mitic, Microelectron. Relia. 40 (2000) p. 1661.
G. Coquery and R. Lallemand, Microelectron. Relia. 40 (2000) p. 1667.
D. Westerhold, G. Schmidt, and H.-J. Schulze, in Proc. Power Conversion Conf. (Nuremburg, 1999).
K. Sommer, GöJ. ttert, G. Lefranc, and R. Spanke, in Proc. Eur. Conf. on Power Electronics and Applications, EPE ’97 (Trondheim, 1997) p. 512.
E.R. Brown and M.C. Shaw, IEEE Trans. Compon. Packag. Technol. (2002) in press.
M. Pecht, Integrated Circuit, Hybrid, and Multichip Module Package Design Guidelines: A Focus on Reliability (John Wiley & Sons, New York, 1994).
A. Elsayed, Reliability Engineering (Addison Wesley Longman, Reading, MA, 1996).
J. He, M.C. Shaw, N. Sridhar, B.N. Cox, and D.R. Clarke, in Electronic Packaging Materials Science X, edited by D.J. Belton, M. Gaynes, E.G. Jacobs, R. Pearson, and T. Wu (Mater. Res. Soc. Symp. Proc. 515, Warrendale, PA, 1998) p. 99.
J. He, M.C. Shaw, J.C. Mather, and R.C. Addison Jr, in Proc. IEEE Industry Applications Soc. Conf. (St. Louis, 1998).
M.C. Shaw, J. He, J. Mather, and R.C. Addison, IEEE Trans. Compon. Packag. Technol. (2002) in press.
J. He, W.L. Morris, N. Sridhar, M.C. Shaw, and J.C. Mather, Adv. Microelectron. (9) (1998) p. 37.
M.C. Shaw, in Comprehensive Composite Materials, edited by A. Kelly and C. Zweben (2000) p. 285.
M.F. Ashby and D.R.G. Jones, Engineering Materials: An Introduction to Their Properties and Applications, International Series on Materials Science and Technology, Vol. 34 (Pergamon Press, Oxford, 1980).
ASM International, Metals Handbook, 9th ed., Failure Analysis and Prevention, Vol. 11 (American Society for Metals, Metals Park, OH, 1986).
C.R. Barrett, W.D. Nix, and S.S. Tetelman, The Principles of Engineering Materials (Prentice Hall, Englewood Cliffs, NJ, 1973).
M.F. Kanninen and C.H. Popelar, Advanced Fracture Mechanics (Oxford, New York, 1985).
R.W. Hertzberg, Deformation and Fracture Mechanics of Engineering Materials, 2nd ed. (John Wiley & Sons, New York, 1983).
B. Lawn and T. Wilshaw, Fracture of Brittle Solids (Cambridge University Press, Cambridge, UK, 1979).
P.M. Stipan, B.C. Beihoff, and M.C. Shaw, in IEEE Handbook on Electronic Packaging, edited by G. Blackwell (CRC Press, Boca Raton, FL, 1999) p. 15.1.
G. Harman, Reliability and Yield Problems in Wirebonding in Microelectronics (International Society for Hybrid Microelectronics, Reston, VA, 1991).
H.A. Schafft, Testing and Fabrication of Wirebond Electrical Connections: A Comprehensive Survey, Technical Note 726 (National Bureau of Standards, 1972).
S. Trigwell, Solid State Technol. (May 1993) p. 45.
V.A. Pitt and C..R. Needes, IEEE Trans. Components, Hybrids, Manuf. Technol. CHMT-5 (4) (1982).
D.R. Olsen and K.L. James, IEEE Trans. Components, Hybrids, Manuf. Technol. CHMT-7 (4) (1984).
M. Pecht, A. Dasgupta, and P. Lali, in Proc. Int. Soc. for Hybrid Microelectronics (Baltimore, 1989) p. 607.
J.K. Nesheim, in Proc. 1984 Int. Symp. on Microelectronics (ISSHM) (Dallas, TX, 1984).
K. James, IEEE Trans. Parts, Hybrids, Packag. PHP-13 (1977).
G.G. Harman and C.L. Wilson, in Electronic Packaging Materials Science IV, edited by R. Jaccodine, K.A. Jackson, E.D. Lilley, and R.C. Sundahl (Mater. Res. Soc. Symp. Proc. 154, lWarrendale, PA, 1989) p. 401.
V.A. Pitt and C.R.G. Needes, IEEE Trans. Components, Hybrids, Manuf. Technol. CHMT-10 (1987).
G.G. Harman, in Proc. 12th Int. Reliability Physics Symp. (1974) p. 131.
K.V. Ravi and E.M. Philosky, in Proc. 10th Annu. Int. Reliability Physics Symp. (1972).
J. Onuki and M. Koizumi, in Proc. 7th Int. Symp. on Power Semiconductor Devices and ICs (IPSD ’95) (Yokohama, Japan).
F. Barlow, Adv. Microelectron. (July/August 2001) p. 11.
X. Liu and G.-Q. Lu, Adv. Microelectron. (July/August 2001) p. 17.
H. Matsuda, M. Hiyoshi, and N. Kawamura, in Proc. Int. Symp. on Power Semiconductor Devices (1997) p. 17.
S. Minehane, R. Duane, O’P. Sullivan, K.G. McCarthy, and A. Mathews, Microelectron. Relia. 40 (2000) p. 1285.
Home Page, www.btat.com.
J. Evans and J.Y. Evans, IEEE Trans. Components, Packag., Manuf. Technol. 21 (1998) p. 459.
H. Takao, Y. Matsumoto, and M. Ishida, Sensors Actuators, A 65 (1998) p. 61.
J.W. Gardner, Microsensors: Principles and Applications (John Wiley & Sons, New York, 1994).
J.S. Hwang, Ball Grid Array & Fine Pitch Peripheral Interconnections (Electrochemical Publications, Port Erin, Isle of Man, 1995).
K. Suganama, MRS Bull. 26 (2001) pp. 880, 884.
Lead-Free Solder Project Final Report, NCMS Report 0401RE96 (National Center for Manufacturing Sciences, Ann Arbor, MI, 1997).
J.S. Hwang, “Solder Materials,” SMT Mag. (2001) p. 60.
Z. Hou, G. Tian, C. Hatcher, and R.W. Johnson, Adv. Microelectron. (March/April 2002) p. 7.
“Guide to Lead-Free Soldering,” SMT Mag. (June 2001).
S.K. Kang, “Recent Progress in Pb-Free Solders and Soldering Technologies,” J. Met. (2001) p. 16.
F.W. Gayle, G. Becka, J. Badgett, G. Whitten, T.Y. Pan, A. Grusd, B. Bauer, R. Lathrop, J. Slattery, I. Anderson, J. Foley, A. Gickler, D. Napp, J. Mather, and C. Olson, “High Temperature Lead-Free Solder for Microelectronics,” J. Met. (2001) p. 17.
D.R. Frear, J.W. Jang, J.K. Lin, and C. Zhang, “Pb-Free Solders for Flip-Chip Interconnects,” J. Met. (2001) p. 28.
L.F. Eastman and U.K. Mishra, IEEE Spectrum (May 2002) p. 28.
F.P. McCluskey, R. Grzybowski, and E. Podlesak, eds., High Temperature Electronics (CRC Press, New York, 1997).
E.R. Brown, Solid-State Electron. 42 (12) (1998) p. 2119.
J. Waldrop, L. Warren Jr, F. Zok, J. Yang, J. McNulty, A..D. McKie, and M.C. Shaw, “High-Temperature Packaging of High-Power Electronics” (2002) unpublished manuscript.
Y. Chen-C. and C.C. Lee, Thin Solid Films 283 (1996) p. 243.
C.C. Lee and G. Matijasevic, IEEE Trans. Components, Hybrids, Manuf. Technol. 16 (3) (1993) p. 311.
M.M. Hou and T.W. Eagar, J. Electron. Packag. 114 (1992) p. 443.
J. Onuki, M. Satou, S. Murakami, and T. Yatsuo, IEEE Trans. Electron Devices 44 (12) (1997) p. 2154.
ASM Handbook of Phase Diagrams (American Society for Metals, Metals Park, OH).
J.H. Harris, “Sintered Aluminum Nitride Ceramics for High-Power Electronic Applications,” J. Met. (1998) p. 56.
D. White, S.D. Keck, and T.G. Nakanishi, in Proc. 29th Int. PCIM Conf. (Europe) (1996) p. 341.
C. Zweban, “Overview: Advances in Composite Materials for Thermal Management in Electronic Packaging,” J. Met. (1998) p. 47.
J.T. Strydom, van J.D. Wyk, and A. Ferreira, IEEE Trans. Ind. Appl. 37 (2) (2001) p. 820.
J.T. Strydom and van J.D. Wyk, in Applied Power Electronics Conf. Record, APEC ’02, session 8 (March 2002).
R. Chen, J.T. Strydom, and van J.D. Wyk, in Proc. Industry Applications Soc. Conf., IAS ’01, Vol. 4 (2001) p. 2232.
M. Juzkow, Power Electron. Technol. (February 2002) p. 58.od]20110131
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Shaw, M.C. High-Performance Packaging of Power Electronics. MRS Bulletin 28, 41–50 (2003). https://doi.org/10.1557/mrs2003.16
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DOI: https://doi.org/10.1557/mrs2003.16