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Epitaxial challenges of GaN on silicon

  • Power Electronics with Wide Bandgap Materials
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Abstract

Recent successes with the fabrication of high-performance GaN-based heterostructures on silicon substrates have made this technology very promising. However, epitaxial growth of GaN on Si is challenging. This article presents some of the challenges of epitaxial growth of GaN-on-Si substrates focusing on basic aspects that are pertinent to consider for power electronics.

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Acknowledgments

The author thanks J.C. Moreno, A. Le Louarn, S. Vézian, and M.J. Rashid for assistance in the growth experiments, and E. Frayssinet, Y. Cordier, P. Srivastava, and S. Rennesson for fruitful discussions.

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Authors and Affiliations

  1. Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, France

    F. Semond

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  1. F. Semond
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Correspondence to F. Semond.

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Semond, F. Epitaxial challenges of GaN on silicon. MRS Bulletin 40, 412–417 (2015). https://doi.org/10.1557/mrs.2015.96

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  • DOI: https://doi.org/10.1557/mrs.2015.96

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