Abstract
Multiferroic magnetoelectric nanostructures with coupled magnetization and electric polarization across their interfaces have stimulated intense research activities over the past decade. Such interface-based magnetoelectric coupling can be exploited to significantly improve the performance of many devices such as memories, tunable radio-frequency/microwave devices, and magnetic sensors. In this article, we introduce a number of current or developing technologies and discuss their limitations. We describe how the use of magnetoelectric nanostructures can overcome these limitations to optimize device performance. We also present challenges that need to be addressed in pursuing practical applications of magnetoelectric devices.
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Acknowledgments
We gratefully acknowledge our colleagues and collaborators for sharing their insights and contributions, including C.W. Nan, Q.M. Zhang, C.B. Eom, D.G. Schlom, and R. Ramesh. We especially thank X.X. Cheng for help preparing the schematic figures and M.-C. Lu and M. Liu for helpful discussions. J.-M.H. and L.-Q.C. gratefully acknowledge financial support from the National Science Foundation under Grant DMR-1234096. T.N. and N.X.S. gratefully acknowledge financial support from the Air Force Research Laboratory through Contract FA8650-14-C-5706 and, in part, Contract FA8650-14-C-5705 and from the W.M. Keck Foundation.
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Hu, JM., Nan, T., Sun, N.X. et al. Multiferroic magnetoelectric nanostructures for novel device applications. MRS Bulletin 40, 728–735 (2015). https://doi.org/10.1557/mrs.2015.195
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DOI: https://doi.org/10.1557/mrs.2015.195