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Gate contact materials in Si channel devices

  • Contact Materials for Nanoelectronics
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Abstract

Research on contact materials in silicon semiconductor devices has recently gained significant momentum due to the increasing performance demands as the complementary metal oxide semiconductor technology advances. Applications include transistor materials such as gate electrodes and contacts to highly doped semiconductors substrates. This review will discuss the key issues in the development of metal gate electrodes with high-κ dielectrics to replace the conventional polycrystalline silicon electrode. Challenges in establishing a work function measurement technique, the role of the metal/high-κ interface in modulating the effective work function, and a review of leading industry solutions will be discussed.

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Authors and Affiliations

  1. Texas Instruments, USA

    Huang-Chun Wen & JJ Chambers

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  1. Huang-Chun Wen
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  2. JJ Chambers
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Wen, HC., Chambers, J. Gate contact materials in Si channel devices. MRS Bulletin 36, 101–105 (2011). https://doi.org/10.1557/mrs.2011.8

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