Skip to main content
SpringerLink
Log in

Contact materials for nanowire devices and nanoelectromechanical switches

  • Contact Materials for Nanoelectronics
  • Published:
MRS Bulletin Aims and scope Submit manuscript

Abstract

The impact of contact materials on the performance of nanostructured devices is expected to be significant. This is especially true since size scaling can increase the contact resistance and induce many unseen phenomenon and reactions that greatly impact device performance. Nanowire and nanoelectromechanical switches are two emerging nanoelectronic devices. Nanowires provide a unique opportunity to control the property of a material at an ultra-scaled dimension, whereas a nanoelectromechanical switch presents zero power consumption in its off state, as it is physically detached from the sensor anode. In this article, we specifically discuss contact material issues related to nanowire devices and nanoelectromechanical switches.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6

Similar content being viewed by others

References

  1. M. Law, J. Goldberger, P. Yang, Annu. Rev. Mater. Res. 34, 83 (2004).

    Article  CAS  Google Scholar 

  2. R.E. Allen, Phys. Rev. B 25, 1423 (1982).

    Article  CAS  Google Scholar 

  3. V. Schmidt, J.V. Wittemann, S. Senz, U. Gösele, Adv. Mater. 21, 2681 (2009).

    Article  CAS  Google Scholar 

  4. U. Landman, R.N. Barnett, A.G. Scherbakov, P. Avouris, Phys. Rev. Lett. 85 (9), 1958 (2000).

    Article  CAS  Google Scholar 

  5. F. Leonard, A. Talin, Phys. Rev. Lett. 97, 026804 (2006).

    Article  Google Scholar 

  6. T. Hanrath, B.A. Korgel, Proc. Inst. Mech. Eng. N. J. Nanoeng. Nanosyst. 218 (2005).

  7. J. Piscator, O. Engström, Physica E 40 (7), 2508 (2008).

    Article  CAS  Google Scholar 

  8. K. Seo, S. Sharma, A.A. Yasseri, D.R. Stewart, T.I. Kamins, Electrochem. Solid-State Lett. 9, G69 (2006).

    Article  CAS  Google Scholar 

  9. S.M. Woodruff, N.S. Dellas, B.Z. Liu, S.M. Eichfeld, T.S. Mayer, J.M. Redwing, S.E. Mohney, J. Vac. Sci. Technol., B 26, 1592 (2008).

    Article  CAS  Google Scholar 

  10. S.J. Tans, A. Verschueren, C. Dekker, Nature 393, 49 (1998).

    Article  CAS  Google Scholar 

  11. M.P. Anantram, F. Leonard, Rep. Prog. Phys. 69, 507 (2006).

    Article  CAS  Google Scholar 

  12. P.L. McEuen, M. Fuhrer, H. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).

    Article  Google Scholar 

  13. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).

    Article  CAS  Google Scholar 

  14. A. Javey, J. Guo, Q. Wang, M. Lundstrom, H. Dai, Nature 424, 654 (2003).

    Article  CAS  Google Scholar 

  15. V. Derycke, R. Martel, J. Appenzeller, Ph. Avouris, Appl. Phys. Lett. 80, 2773 (2002).

    Article  CAS  Google Scholar 

  16. M.-H. Ham, J.-H. Choi, W. Hwang, C. Park, W.-Y. Lee, J.-M. Myoung, Nanotechnology 17, 2203 (2006).

    Article  CAS  Google Scholar 

  17. J. Zhou, Y. Gu, Y. Hu, W. Mai, P.-H. Yeh, G. Bao, A.K. Sood, D.L. Polla, Z.L. Wang, Appl. Phys. Lett. 94, 191103 (2009).

    Article  Google Scholar 

  18. T.-Y. Wei, P.-H. Yeh, S.-Y. Lu, Z.L. Wang, J. Am. Chem. Soc. 131, 17690 (2009).

    Article  CAS  Google Scholar 

  19. K. Gopalakrishnan, P.B. Griffin, J.D. Plummer, Technical Digest of International Electron Devices Meeting, 289 (2002).

  20. W.Y. Choi, B.-G. Park, J.D. Lee, T.-J.K. Liu, IEEE Electron Device Lett. 28, 743 (2007).

    Article  CAS  Google Scholar 

  21. H. Kam, T.-J.K. Liu, E. Alon, M. Horowitz, Technical Digest of International Electron Devices Meeting, 1 (2008).

  22. http://www.itrs.net/Links/2009ITRS/2009Chapters_2009Tables/2009_ERD.pdf

  23. K. Akarvardar, C. Eggimann, D. Tsamados, Y.S. Chauhan, G.C. Wan, A.M. Ionescu, R.T. Howe, H.–S.P. Wong, IEEE Trans. Electron Devices 55, 1 (2008).

    Article  Google Scholar 

  24. H.C. Nathanson, W.E. Newell, R.A. Wickstrom, IEEE Trans. Electron Devices 14 (3), 117 (1967).

    Article  CAS  Google Scholar 

  25. G. Blackburn, M. Levi, J. Janata, Appl. Phys. Lett. 43 (7), 700 (1983).

    Article  CAS  Google Scholar 

  26. T. Sato, M. Shimizu, H. Uchida, T. Katsube, Sens. Actuators, B 20 (2/3), 213 (1994).

    Article  CAS  Google Scholar 

  27. Z. Gergintschew, P. Kornetzky, D. Schipanski, Sens. Actuators, B 35/36 (1–3), 285 (1996).

    Article  Google Scholar 

  28. J. Voorthuyzen, P. Bergveld, Sens. Actuators, A 14 (4), 349 (1988).

    Article  CAS  Google Scholar 

  29. J. Huang, R. Howe, H. Lee, Electron. Lett. 25 (23), 1571 (1989).

    Article  Google Scholar 

  30. A.M. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M.J. Declercq, Ph. Renaud, C. Hibert, Ph. Fluckiger, G.-A. Racine, Proc. ISQED 2002, 496 (2002).

    Google Scholar 

  31. H. Kam, D.T. Lee, R.T. Howe, T.-J. King, IEDM Tech. Dig. 463 (2005).

  32. K. Akarvardar, D. Elata, R. Parsa, G.C. Wan, K. Yoo, J. Provine, P. Peumans, R.T. Howe, H.-S.P. Wong, Technical Digest of International Electron Devices Meeting (IEDM) 299 (2007).

  33. J.P. Singh, D.-L. Liu, D.-X. Ye, R.C. Picu, T.-M. Lu, G.-C. Wang, Appl. Phys. Lett. 84, 3657 (2004).

    Article  CAS  Google Scholar 

  34. I. Bargatin, I. Kozinsky, M.L. Roukes, Appl. Phys. Lett. 90, 093116 (2007).

    Article  Google Scholar 

  35. W.W. Jang, J.O. Lee, J.-B. Yoon, M.-S. Kim, J.-M. Lee, S.-M. Kim, K.-H. Cho, D.-W. Kim, D. Park, W.-S. Lee, Appl. Phys. Lett. 92, 103110 (2008).

    Article  Google Scholar 

  36. K. Akarvardar, H. Wong, “Nanoelectromechanical Logic and Memory Devices,” presented at the ECS 2009 Summer Meeting.

  37. M.Y.A. Yousif, P. Lundgren, F. Ghavanini, P. Enoksson, S. Bengtsson, Nanotechnology 19, 285204 (2008).

    Article  CAS  Google Scholar 

  38. S. Tans, A.R. Verchueren, C. Dekker, Nature 393, 49 (1998).

    Article  CAS  Google Scholar 

  39. S.J. Tans, M.H. Devoret, H. Dai, A. Thess, R.E. Smalley, L.J. Geerligs, C. Dekker, Nature 386, 474 (1997).

    Article  CAS  Google Scholar 

  40. Y.-M. Lin J. Appenzeller, Ph. Avouris, Technical Digest of International Electron Devices Meeting (IEDM) 687 (2004).

  41. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, H.J. Dai, Nat. Mater. 1, 241 (2002).

    Article  CAS  Google Scholar 

  42. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, H. Dai, Phys. Rev. Lett. 92, 106804 (2004).

    Article  Google Scholar 

  43. D.V. Singh, K.A. Jenkins, J. Appenzeller, Electron. Lett. 41, 280 (2005).

    Article  Google Scholar 

  44. S. Ilani, L.A.K. Donev, M. Kindermann, P.L. McEuen, Nat. Phys. 2, 687 (2006).

    Article  CAS  Google Scholar 

  45. G. Rebeiz, J.B. Muldavin, IEEE Microwave Mag. 2, 59 (2001).

    Article  Google Scholar 

  46. J.S. Bunch, A.M. Zande, S.S. Verbridge, I.W. Frank, D.M. Tanenbaum, J.M. Parpia, H.G. Craighead, P.L. McEuen, Science 315 (5811) 490 (2007).

    Article  CAS  Google Scholar 

  47. M.M. Hussain, C.E. Smith, D. Elata, K. Akarvardar, R. Parsa, K. Yoo, J. Provine, J. Williams, K. Rader, J. Barnett, C. Park, M. Cruz, P.D. Kirsch, H.-S.P. Wong, R.T. Howe, R. Jammy, NATO Advanced Research Workshop on Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators, St. Petersburg, Russia (2009).

  48. R. Parsa, S. Chong, N. Patil, K. Akarvardar, J. Provine, D. Lee, D. Elata, S. Mitra, H.-S.P. Wong, R.T. Howe, Solid-State Sensors, Actuators, and Microsystems Workshop 7 (2010).

Download references

Author information

Authors and Affiliations

  1. King Abdullah University of Science and Technology, USA

    Muhammad Mustafa Hussain

  2. Georgia Institute of Technology, USA

    Jinhui Song

Authors
  1. Muhammad Mustafa Hussain
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jinhui Song
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Muhammad Mustafa Hussain.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hussain, M., Song, J. Contact materials for nanowire devices and nanoelectromechanical switches. MRS Bulletin 36, 106–111 (2011). https://doi.org/10.1557/mrs.2011.6

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/mrs.2011.6

Search

Navigation