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First demonstration of “Leaky Integrate and Fire” artificial neuron behavior on (V0.95Cr0.05)2O3 thin film

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Abstract

A great challenge in the field of neurocomputing is to mimic the brain behavior by implementing artificial synapses and neurons directly in hardware. This work shows that a Leaky Integrate and Fire (LIF) artificial neuron can be realized with a two-terminal device made of Mott insulator thin films. Polycrystalline thin films of the well-known Mott insulator oxide (V0.95Cr0.05)2O3 were deposited by magnetron sputtering and patterned with micron-scale TiN electrodes. These devices exhibit a volatile resistive switching and a remarkable LIF behavior under a train of pulses suggesting that LIF artificial neurons may be realized from (V0.95Cr0.05)2O3 thin films.

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Acknowledgments

The authors thank the “Region Pays de la Loire” for funding the present work in the framework of the “Pari scientifique Neuro-Mott”. P. S. acknowledges the support of the Spanish Ministry of Economy through the Ramón y Cajal (grant no. RYC-2012-01031).

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Authors and Affiliations

  1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322, Nantes Cedex 3, France

    Coline Adda, Laurent Cario, Julien Tranchant, Etienne Janod, Marie-Paule Besland & Benoit Corraze

  2. LPS, CNRS-UMR8502, Université de Paris-Sud, Orsay, 91405, France

    Coline Adda & Marcelo Rozenberg

  3. CIC nanoGUNE, Tolosa Hiribidea 76, 20018, Donostia-San Sebastian, Spain

    Pablo Stoliar

Authors
  1. Coline Adda
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  2. Laurent Cario
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  3. Julien Tranchant
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  4. Etienne Janod
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  5. Marie-Paule Besland
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  6. Marcelo Rozenberg
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  7. Pablo Stoliar
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  8. Benoit Corraze
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Correspondence to Coline Adda or Laurent Cario.

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Adda, C., Cario, L., Tranchant, J. et al. First demonstration of “Leaky Integrate and Fire” artificial neuron behavior on (V0.95Cr0.05)2O3 thin film. MRS Communications 8, 835–841 (2018). https://doi.org/10.1557/mrc.2018.90

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  • DOI: https://doi.org/10.1557/mrc.2018.90

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