Abstract
We report on the low-temperature electrical characterization of bilayer MoS2 treated with increasing dose of oxygen:argon (1:3) plasma. We characterize the effective Schottky barrier heights as a function of plasma exposure time and observe a significant barrier lowering, with no accompanying p-type conduction in the negative bias region. Furthermore, we observe a crossover in the temperature-dependent conduction regimes below 181 K due to the plasma exposure. The Efros-Shklovskii (ES) hopping regime is seen to transform upon plasma exposure to a mixed ES/thermally-activated regime at high temperatures, and to a strongly short-range Arrhenius regime at low temperatures. We attribute the observed crossovers to a critical defect density created by the surface reaction with the plasma.
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Acknowledgments
We are grateful to members of staff at the Advanced Microscopy Laboratory, CRANN, Trinity College Dublin for their continued technical support. We thank Robert O’Connell for assistance with liquid nitrogen, and Daniel S. Fox for assistance with TEM. The work at the School of Physics and the Centre for Research on Adaptive Nanostructures and Nanodevices at Trinity College Dublin is supported by Science Foundation Ireland [grant No: 11/PI/ 1105, 12/TIDA/I2433 07/SK/I1220a].
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Jadwiszczak, J., Zhou, Y. & Zhang, H. Low-temperature electrical conduction of plasma-treated bilayer MoS2. MRS Communications 8, 514–520 (2018). https://doi.org/10.1557/mrc.2018.72
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DOI: https://doi.org/10.1557/mrc.2018.72