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Bismuth doping on CuGaS2 thin films: structural and optical properties

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Abstract

In this work, we present a solvothermal method to prepare bismuth (Bi)-doped CuGaS2 chalcopyrite nanocrystals ink and apply it to an all-solution-processed approach for the preparation of films with a thickness of approximately 730 nm and with enhanced optical properties and lower band gap energy than the undoped semiconductor films. The low-cost deposition method is comprised by spray deposition of the chal-cogenide nanocrystals ink onto the molybdenum substrates, producing microcrystalline films with grains larger than 400 nm originated from coalescence of Bi-doped nanocrystals. Bi-doped CuGaS2 microcrystalline films are a good candidate to be applied as an absorber layer in thin-film solar cells.

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Authors and Affiliations

  1. Department of Chemistry, Federal University of Sao Carlos, Rod. Washington Luiz, Km 235, CEP, 13565-905, Sao Carlos-SP, Brazil

    Marcos A. S. Andrade Jr. & Lucia H. Mascara

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  1. Marcos A. S. Andrade Jr.
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  2. Lucia H. Mascara
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Correspondence to Marcos A. S. Andrade Jr..

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Andrade, M.A.S., Mascara, L.H. Bismuth doping on CuGaS2 thin films: structural and optical properties. MRS Communications 8, 504–508 (2018). https://doi.org/10.1557/mrc.2018.63

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