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Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements

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Abstract

The electrochemical catalytic effects of the NiO islands and layer on n-type GaN were investigated. The NiO islands covered some parts of the GaN surface and were seen to improve photoanodic current and prevent photoanodic corrosion. However, the NiO layer was found to worsen the photoanodic current. Hole transportation is thought to occur from the GaN valence band edge to the NiO valence band edge in their surface plane direction due to the band alignment. In addition, the electron capture for water oxidation is expected to be the valence band edge of the NiO instead of the intermediate state.

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References

  1. K. Fujii, S. Nakamura, K. Watanabe, B. Bagheri, M. Sugiyama, and Y. Nakano: Over 12% light to hydrogen energy conversion efficiency of hydrogen generation from water: New system concept, concentrated photovoltaic electrochemical cell (CPEC). Mater. Res. Soc. Symp. Proc. 1491, DOI: 10.1557-opl.2012, 1739 (2012).

    Google Scholar 

  2. C.C.L. McCrory, S. Jung, J.C. Peters, and T.F. Jaramillo: Benchmarking heterogeneous electrocatalysts for the oxygen evolution reaction. J. Am. Chem. Soc. 135, 16977 (2013).

    Article  CAS  Google Scholar 

  3. J.R. Galan-Mascaros: Water oxidation at electrodes modified with earth-abundant transition-metal catalysts. ChemElectroChem 2, 37 (2015).

    Article  CAS  Google Scholar 

  4. A.J. Nozik and R. Memming: Physical chemistry of semiconductor-liquid interfaces. J. Phys. Chem. 100, 13061 (1996).

    Article  CAS  Google Scholar 

  5. R. Memming: Semiconductor Electrochemistry. Chap.7 Charge Transfer Processes at the Semiconductor-liquid Interface, p. 190; 2015, 2nd ed., John Wiliy & Sons, Weinheim, Germany, 2008, Chap.7 Charge Transfer Processes at the Semiconductor-liquid Interface, p. 213.

    Google Scholar 

  6. A. Winnerl, J.A. Garrido, and M. Stutzmann: Electrochemical characterization of GaN surface states. J. Appl. Phys. 122, 045302 (2017).

    Article  Google Scholar 

  7. B. Sasi, K.G. Gopchandran, P.K. Manoj, P. Koshy, P.P. Rao, and V. K. Vaidyan: Preparation of transparent and semiconducting NiO films. Vacuum 68, 149 (2003).

    Article  Google Scholar 

  8. T. Hayashi, M. Deura, and K. Ohkawa: High stability and efficiency of GaN photocatalyst for hydrogen generation from water. Jpn.J.Appl. Phys. 51, 112601 (2012).

    Article  Google Scholar 

  9. S.H. Kim, M. Ebaid, J.-H. Kang, and S.-W. Ryu: Improved efficiency and stability of GaN photoanode in photoelectrochemical water splitting by NiO cocatalyst. Appl. Surf. Sci. 305, 638 (2014).

    Article  CAS  Google Scholar 

  10. J.-H. Kang, S.H. Kim, M. Ebaid, J.K. Lee, and S.-W. Ryu: Efficient photo-electrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalyst. Acta Mater. 79, 188 (2014).

    Article  CAS  Google Scholar 

  11. K. Koike, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, and K. Fujii: Photoelectrochemical property differences between NiO dots and layer on n-type GaN for water splitting. J. Electrochem. Soc. 163, H1091 (2016).

    Article  CAS  Google Scholar 

  12. K. Koike, K. Yamamoto, S. Ohara, T. Kikitsu, K. Ozasa, S. Nakamura, M. Sugiyama, Y. Nakano, and K. Fujii: Effects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytes. Int. J. Hydrog. Energy 42, 9493 (2017).

    Article  CAS  Google Scholar 

  13. K. Fujii and K. Ohkawa: Photoelectrochemical properties of p-Type GaN in comparison with n-type GaN. Jpn. J. Appl. Phys. 44, L909 (2005).

    Article  CAS  Google Scholar 

  14. K. Fujii and K. Ohkawa: Bias-assisted H2 gas generation in HCI and KOH solutions using n-type GaN photoelectrode. J. Electrochem. Soc. 153, A468 (2006).

    Article  CAS  Google Scholar 

  15. C.G. Van de Walle and J. Neugebauer: Universal alignment of hydrogen levels in semiconductors, insulators and solutions. Nature 423, 626 (2003).

    Article  Google Scholar 

  16. M.C. Toroker, D.K. Kanan, N. Alidoust, L.Y. Isseroff, P. Liaob, and E. A. Carter: First principles scheme to evaluate band edge positions in potential transition metal oxide photocatalysts and photoelectrodes. Phys. Chem. Chem. Phys. 13, 16644 (2011).

    Article  CAS  Google Scholar 

  17. T.M. Ramond, G.E. Davico, F. Hellberg, F. Svedberg, P. Salen, P. Sbderqvist, and W.C. Lineberger: Photoelectron spectroscopy of nickel, palladium, and platinum oxide anions. J. Mol. Spectrosc. 216, 1 (2002).

    Article  CAS  Google Scholar 

  18. V.I. Sokolov, V.A. Pustovarov, V.N. Churmanov, V.Yu. Ivanov, N. B. Gruzdev, P.S. Sokolov, A.N. Baranov, and A.S. Moskvin: Unusual x-ray excited luminescence spectra of NiO suggestive of a self-trapping of the d-d charge transfer exciton. Phys. Rev. B 86, 115128 (2012).

    Article  Google Scholar 

  19. H.Y. Peng, Y.F. Li, W.N. Lin, Y.Z. Wang, X.Y. Gao, and T. Wu: Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation. Sci. Rep. 2, 442 (2012).

    Article  Google Scholar 

  20. M.D. Irwin, D.B. Buchholz, A.W. Hains, R.P.H. Chang, and T.J. Marks: p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells. Proc. Natl. Acad. Sci. USA 105, 2783 (2008).

    Article  CAS  Google Scholar 

  21. M.A. Reshchikov and H. Morkog: Luminescence properties of defects in GaN. J. Appl. Phys. 97, 061301 (2005).

    Article  Google Scholar 

  22. K. Fujii, M. Ono, Y. Iwaki, K. Sato, K. Ohkawa, and T. Yao: Photoelectrochemical properties of the p-n junction in and near the surface depletion region of n-type GaN. J. Phys. Chem. C 114, 22727 (2010).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. RIKEN Center for Advanced Photonics, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan

    Kayo Koike, Satoshi Wada & Katsushi Fujii

  2. RIKEN Innovation Center, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan

    Takenari Goto & Shinichiro Nakamura

Authors
  1. Kayo Koike
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  2. Takenari Goto
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  3. Shinichiro Nakamura
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  4. Satoshi Wada
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  5. Katsushi Fujii
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Correspondence to Katsushi Fujii.

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Koike, K., Goto, T., Nakamura, S. et al. Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements. MRS Communications 8, 480–486 (2018). https://doi.org/10.1557/mrc.2018.51

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  • DOI: https://doi.org/10.1557/mrc.2018.51

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