Abstract
Herein, we show that scanning probe microscopy (SPM) is an effective tool permitting to disclose the nature of the colossal dielectric permittivity characteristic of CaCu3Ti4O12 (CCTO) compound. SPM data confirm the existence of micro- and nanoscale barrier layer capacitance mechanisms which simultaneously contribute to the electrical conductivity of the material. The former mechanism is associated with the potential grain-to-grain barriers. The latter mechanism involves the barriers created by intragrain structural defects. The results of the SPM study shed new light on the origin of the colossal dielectric constant in CCTO.
Similar content being viewed by others
References
P. Lunkenheimer, S. Krohns, S. Riegg, S.G. Ebbinghaus, A. Reller, and A. Loidl: Colossal dielectric constants in transition-metal oxides. Eur. Phys. J. Spec. Top 180, 61–89 (2009).
A.P. Ramirez, M.A. Subramanian, M. Gardel, G. Blumberg, D. Li, T. Vogt, and S.M. Shapiro: Giant dielectric constant response in a copper-titanate. Solid State Commun. 115, 217–220 (2000).
D.C. Sinclair and A.R. West: Impedance and modulus spectroscopy of semiconducting BaTiO3 showing positive temperature coefficient of resistance. J. Appl. Phys. 66, 3850 (1989).
R. Schmidt, M.C. Stennett, N.C. Hyatt, J. Pokorny, J. Prado-Gonjal, M. Li, and D.C. Sinclair: Effects of sintering temperature on the internal barrier layer capacitor (MBLC) structure in CaCu3Ti4O12 (CCTO) ceramics. J. Eur. Ceram. Soc. 32, 3313–3323 (2012).
S. Krons, P. Lunkenheimer, S.G. Ebbinghause, and A. Loidl: Colossal dielectric constants in single-crystalline and ceramic CaCu3Ti4O12 investigated by broadband dielectric spectroscopy. J. Appl. Phys. 103, 084107 (2008).
M. Li, Z. Shen, M. Nygren, A. Feteira, D.C. Sinclair, and A.R. West: Origin(s) of the apparent high permittivity in CaCu3Ti4O12 ceramics: clarification on the contributions from internal barrier layer capacitor and sample-electrode contact effects. J. Appl. Phys. 106, 104106 (2009).
M.H. Whangbo and M.A. Subramanian: Structural model of planar defects in CaCu3Ti4O12 exhibiting a giant dielectric constant. Chem. Mater. 18, 3257–3260 (2006).
P.R. Bueno, R. Tararan, R. Parra, E. Joanni, M.A. Ramírez, W.C. Ribeiro, E. Longo, and J.A. Varela: A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features. J. Phys. D Appl. Phys. 42, 055404 (2009).
T. Fang and H.K. Shiau: Mechanism for developing the boundary barrier layers of CaCu3Ti4O12. J. Am. Ceram. Soc. 87, 2072–2079 (2004).
T.-T. Fang and C.P. Liu: Evidence of the internal domains for inducing the anomalously high dielectric constant of CaCu3Ti4O12. Chem. Mater. 17, 5167–5171 (2005).
F. Amaral, C.P.L. Rubinger, M.A. Valente, L.C. Costa, and R.L. Moreira: Enhanced dielectric response of GeO2-doped CaCu3Ti4O12 ceramics. J. Appl. Phys. 105, 034109 (2009).
A. Le Bail, H. Duroy, and J.L. Fourquet: Ab-initio structure determination of LiSbWO8 by x-ray powder diffraction. Mater. Res. Bull. 23, 447–452 (1988).
J. Rodríguez-Carvajal: Recent advances in magnetic structure determination by neutron powder diffraction. Phys. B 192, 55–69 (1993).
A.K. Jonscher: Dielectric relaxation in solids. J. Phys. D Appl. Phys. 32, 14 (1999).
O. Bidault, M. Maglione, M. Actis, M. Kchikech, and B. Salce: Polaronic relaxation in perovskites. Phys. Rev. B 52, 4191 (1995).
T. van Dijk and A.J. Burggraaf: Grain boundary effects. Phys. Status Solidi (a) 63, 229 (1981).
F. Amaral, L.C. Costa, M.A. Valente, A.J.S. Fernandes, N. Franco, E. Alves, and F.M. Costa: Colossal dielectric constant of poly- and single-crystalline CaCu3Ti4O12 fibers grown by the laser floating zone technique. Acta Mater. 59, 102 (2011).
G. Du, F. Wei, W. Li, and N. Chen: Co-doping effects of A-site Y3+ and B-site Al3+ on the microstructures and dielectric properties of CaCu3Ti4O12 ceramics. J. Eur. Ceram. Soc. 37, 4653 (2017).
Acknowledgments
This work was partly supported by Fundacao para a Ciencia e a Tecnologia (FCT), through the projects UID/CTM/50025/2013 and UID/FIS/04564/2016, also co-funded by FEDER/COMPETE. M.S.I. and V.A.K. are grateful to the FCT for financial support through the projects CENTRO-01-0145-FEDER-000014 (MATIS) and IF/00819/2014/CP1223/CT0011. Access to TAIL-UC facility funded under QREN-Mais Centro project ICT_2009_02_012_1890 is acknowledged as well.
Author information
Authors and Affiliations
Corresponding author
Supplementary material
Supplementary material
The supplementary material for this article can be found at {rs|https://doi.org/10.1557/mrc.2018.151|url|}.
Rights and permissions
About this article
Cite this article
Ivanov, M.S., Amaral, F., Khomchenko, V.A. et al. A novel approach to study the conductivity behavior of CaCu3Ti4O12 using scanning probe microscopy technique. MRS Communications 8, 932–937 (2018). https://doi.org/10.1557/mrc.2018.151
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/mrc.2018.151