Abstract
Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (−201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.
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References
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi: Development of gallium oxide power devices. Phys. Status Solidi 211, 21 (2014).
J. Zhang, C. Xia, Q. Deng, W. Xu, H. Shi, F. Wu, and J. Xu: Growth and characterization of new transparent conductive oxides single crystals ß-Ga2O3: Sn. J. Phys. Chem. Solids 67, 1656 (2006).
D. Gogova, M. Schmidbauer, and A. Kwasniewski: Homo- and heteroepitaxial growth of Sn-doped ß-Ga2O3 layers by MOVPE. CrystEngComm 17, 6744 (2015).
M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono: Preparation of highly conductive, deep ultraviolet transparent ß-Ga2O3 thin film at low deposition temperatures. Thin Solid Films 411, 134 (2002).
M. Bartic, C-I. Baban, H. Suzuki, M. Ogita, and M. Isai: ß-gallium oxide as oxygen gas sensors at a high temperature. J. Am. Ceram. Soc. 90, 2879 (2007).
M.D. Heinemann, J. Berry, G. Teeter, T. Unold, and D. Ginley: Oxygen deficiency and Sn doping of amorphous Ga2O3. Appl. Phys. Lett. 108, 022107 (2016).
M. Zinkevich and A. Fritz: Thermodynamic assessment of the gallium–oxygen system. J. Am. Ceram. Soc. 87, 683 (2004).
R. Schewski, G. Wagner, M. Baldini, D. Gogova, Z. Galazka, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P. Vogt, and M. Albrecht: Epitaxial stabilization of pseudomorphic a-Ga2O3 on sapphire (0001). Appl. Phys. Express 8, 011101 (2015).
T. Zacherele, P.C. Schmidt, and M. Martin: Ab initio calculations on the defect structure of ß-Ga2O3. Phs. Rev. B 87, 235206 (2013).
S.C. Siah, R.E. Brandt, K. Lim, L.T. Schelhas, R. Jaramillo, M.D. Heinemann, D. Chua, J. Wright, J.D. Perkins, C.U. Segre, R.G. Gordon, M.F. Toney, and T. Buonassisi: Dopant activation in Sn-doped Ga2O3 investigated by x-ray absorption spectroscopy. Appl. Phys. Lett. 107, 252103 (2015).
K. Matsuzaki, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono: Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor. Thin Solid Films 496, 37 (2006).
T.C. Lovejoy, R. Chen, X. Zheng, E.G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S.T. Dunham, F.S. Ohuchi, and M.A. Olmstead: Band bending and surface defects in ß-Ga2O3. Appl. Phys. Lett. 100, 181602 (2012).
Acknowledgments
This work was funded by the Center for the Next Generation of Materials by Design, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Contract No. DE-AC36-08GO28308 to NREL.
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The supplementary material for this article can be found at https://doi.org/10.1557/mrc.2016.50.
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Garten, L.M., Zakutayev, A., Perkins, J.D. et al. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition. MRS Communications 6, 348–353 (2016). https://doi.org/10.1557/mrc.2016.50
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DOI: https://doi.org/10.1557/mrc.2016.50