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Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K

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Abstract

Thermal conductivity of single-crystal boron-doped diamond (BDD) was studied in comparison with high-quality pure I la-type diamond in the temperature range from 20 to 400 K. Boron content in BDD was about 1019 cnr3 that is a typical value of p+ substrates used for power device applications. The thermal conductivity of BDD is about 10 times less than that of lla diamond near 100 K, but above room temperature the difference is <30%. The observed deviation mostly takes place due to acoustic phonon scattering on extended structural defects occurring in synthetic diamond at high boron content.

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Acknowledgments

Thermal conductivity measurements were carried out using the facility of the Shared-Use Equipment Center of the Technological Institute for Superhard and Novel Carbon Materials. The work at TISNCM was supported by the Ministry of Education and Science of the Russian Federation, scientific project no.14.580.21.0003 (RFMEFI58015X0003).

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Authors and Affiliations

  1. Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia

    D. Prikhodko, S. Tarelkin, V. Bormashov, A. Golovanov, M. Kuznetsov, D. Teteruk, A. Volkov & S. Buga

  2. Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia

    D. Prikhodko, S. Tarelkin, V. Bormashov, A. Golovanov, A. Volkov & S. Buga

  3. National University of Science and Technology MISiS, 119049, 2 Leninskiy Prospect, Moscow, Russia

    S. Tarelkin

Authors
  1. D. Prikhodko
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  2. S. Tarelkin
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  3. V. Bormashov
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  4. A. Golovanov
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  5. M. Kuznetsov
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  6. D. Teteruk
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  7. A. Volkov
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  8. S. Buga
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Correspondence to V. Bormashov.

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Prikhodko, D., Tarelkin, S., Bormashov, V. et al. Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K. MRS Communications 6, 71–76 (2016). https://doi.org/10.1557/mrc.2016.12

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  • DOI: https://doi.org/10.1557/mrc.2016.12

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