Abstract
More than two decades of III-N materials research has led to the production of visible spectrum commercial light-emitting diodes (LEDs) and laser diodes (LDs). Commercial c-plane LEDs are currently limited by efficiency droop which describes the decline in efficiency with increasing input current density. Laser-based sources, however, provide peak efficiencies at much higher current densities and may circumvent efficiency droop limitations. The potential benefits of non-basal plane (NBP) orientations could accelerate the evolution of solid-state lighting from LED to LD sources. Here, we review the progress in long-wavelength (440-590 nm) NBP quantum well LD research and discuss applications in solid-state lighting, visible light communication and smart lighting.
Similar content being viewed by others
References
S. Nakamura: Background story of the invention of efficient blue InGaN light emitting diodes. Nobel Lecture (2014). Available at http://www.nobelprize.org/mediaplayer/index.php?id=2423
S. Nakamura, T. Mukai, and M. Senoh: Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett 64, 1687–1689 (1994).
S. Nakamura, M. Senoh, N. Iwasa, and S.-I. Nagahama: High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum well structures. Jpn. J. Appl. Phys. 34, L797–L799 (1995).
J.R. Lang, C.J. Neufeld, C.A. Hurni, S.C. Cruz, E. Matioli, U.K. Mishra, and J.S. Speck: High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy. Appl. Phys. Lett. 98, 131115 (2011).
E. Matioli, C. Neufeld, M. Iza, S.C. Cruz, A.a Al-Heji, X. Chen, R.M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch: High internal and external quantum efficiency InGaN/GaN solar cells. Appl. Phys. Lett. 98, 021102 (2011).
U. Mishra: Redefining energy efficiency. Presentation for the Institute for Energy Efficiency, UCSB (2014). Available at http://iee.ucsb.edu/files/04%20Umesh%20Mishra%20Transphorm%20-%20IEE%20Summit.pdf
Y. Taniyasu, M. Kasu, and T. Makimoto: An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature 441, 325–328 (2006).
K. Ohkawa, T. Watanabe, M. Sakamoto, A. Hirako, and M. Deura: 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE. J. Cryst. Growth 343, 13–16 (2012).
Y. Kawaguchi, C.Y. Huang, Y.R. Wu, Y. Zhao, S.P. DenBaars, and S. Nakamura: Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage. Jpn. J. Appl. Phys. 52, 08JC08 (2013).
H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan: Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode. Appl. Phys. Lett. 93, 241106 (2008).
S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda: High-power (over 100 mW) green laser diodes on semipolar 20-21 GaN substrates operating at wavelengths beyond 530 nm. Appl. Phys. Express 5, 082102 (2012).
D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood, and C.A. Burrus: Band-edge electroabsorption in quantum well structures: the quantum-confined Stark effect. Phys. Rev. Lett. 53, 2173–2176 (1984).
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki: Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells. Jpn. J. Appl. Phys. 36, L382–L385 (1997).
J.W. Raring, E.M. Hall, M.C. Schmidt, C. Poblenz, B. Li, N. Pfister, D.F. Feezell, R. Craig, J.S. Speck, S.P. DenBaars, and S. Nakamura: State-of-the-art continuous-wave InGaN laser diodes in the violet, blue and green wavelength regimes. Proc. SPIE 7686, 76860L (2010).
P. Waltereit, O. Brandt, M. Ramsteiner, A. Trampert, H.T. Grahn, J. Menniger, M. Reiche, R. Uecker, P. Reiche, and K.H. Ploog: Growth of m-plane GaN (1-100): a way to evade electrical polarization in nitrides. Phys. Status Solidi 180, 133–138 (2000).
M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars: Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire. Appl. Phys. Lett. 81, 469 (2002).
C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J.S. Speck, S. Nakamura, S.P. DenBaars, and D. Feezell: High-power, low-efficiency-droop semipolar (20-2-1) single-quantum-well blue light-emitting diodes. Appl. Phys. Express 5, 062103 (2012).
K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota: Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm. Appl. Phys. Lett. 94, 071105 (2009).
Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura: 531 nm green lasing of InGaN based laser diodes on semi-polar 20-21 free-standing GaN substrates. Appl. Phys. Express 2, 082101 (2009).
M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura: InGaN-based true green laser diodes on novel semi-polar 20-21 GaN substrates. J. Cryst. Growth 315, 258–262 (2011).
Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura: Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar 20-21 GaN substrates. Appl. Phys. Express 2, 092101 (2009).
T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai: 510-515 nm InGaN-Based green laser diodes on c-plane GaN substrate. Appl. Phys. Express 2, 062201 (2009).
S. Masui, T. Miyoshi, T. Yanamoto, and S. Nagahama: Blue and green laser diodes for large laser display. In Conf. Lasers Electro-Optics Pacific Rim. 1-2 (2013).
S. Jahangir, T. Frost, A. Hazari, L. Yan, E. Stark, T. LaMountain, J.M. Millunchick, B.S. Ooi, and P. Bhattacharya: Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon. Appl. Phys. Lett. 106, 071108 (2015).
T. Frost, S. Jahangir, E. Stark, S. Deshpande, A. Hazari, C. Zhao, B.S. Ooi, and P. Bhattacharya: Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon. Nano Lett. 14, 4535–4541 (2014).
M. Zhang, A. Banerjee, C.-S. Lee, J.M. Hinckley, and P. Bhattacharya: A InGaN/GaN quantum dot green (λ = 524 nm) laser. Appl. Phys. Express 98, 221104 (2011).
T. Frost, A. Banerjee, K. Sun, S.L. Chuang, and P. Bhattacharya: InGaN/GaN quantum dot red (630 nm) laser. IEEE J. Quantum Electron. 49, 923–931 (2013).
E. Kioupakis, P. Rinke, K.T. Delaney, and C.G. Van de Walle: Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes. Appl. Phys. Lett. 98, 161107 (2011).
J. Iveland, L. Martinelli, J. Peretti, J.S. Speck, and C. Weisbuch: Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013).
A. David and M.J. Grundmann: Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis. Appl. Phys. Lett. 96, 103504 (2010).
J.J. Wierer, J.Y. Tsao, and D.S. Sizov: Comparison between blue lasers and light-emitting diodes for future solid-state lighting. Laser Photonics Rev. 7, 963–993 (2013).
M. Funato, Y.S. Kim, Y. Ochi, A. Kaneta, Y. Kawakami, T. Miyoshi, and S. Nagahama: Optical gain spectra of a (0001) InGaN green laser diode. Appl. Phys. Express 6, 122704 (2013).
J.W. Raring, M.C. Schmidt, C. Poblenz, Y.C. Chang, M.J. Mondry, B. Li, J. Iveland, B. Walters, M.R. Krames, R. Craig, P. Rudy, J.S. Speck, S.P. DenBaars, and S. Nakamura: High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates. Appl. Phys. Express 3, 112101 (2010).
S. Brüninghoff, C. Eichler, S. Tautz, A. Lell, M. Sabathil, S. Lutgen, and U. Strauß: 8W single-emitter InGaN laser in pulsed operation. Phys. Status Solidi 206, 1149–1152 (2009).
A. Pourhashemi, R.M. Farrell, D.A. Cohen, J.S. Speck, S.P. DenBaars, and S. Nakamura: High-power blue laser diodes with indium tin oxide cladding on semipolar (20-2-1) GaN substrates. Appl. Phys. Lett. 106, 111105 (2015).
C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss: Beyond blue pico laser: development of high power blue and low power direct green. Proc. SPIE 8277, 82770K 1-7 (2012).
T. Melo: Analysis of gain and absorption spectra of GaN-based laser diodes. PhD dissertation, University of California, Santa Barbara (2012).
N. Michel, M. Lecomte, O. Parillaud, M. Calligaro, J. Nagle, and M. Krakowski: Optimization of the wall-plug efficiency of Al-free active region diode lasers at 975 nm. Proc. SPIE 6997, 69971W 1–8 (2008).
P. Crump, W. Dong, M. Grimshaw, J. Wang, S. Patterson, D. Wise, M. DeFranza, S. Elim, S. Zhang, M. Bougher, J. Patterson, S. Das, J. Bell, J. Farmer, M. DeVito, and R. Martinsen: 100-W+ diode laser bars show >71% power conversion from 790-nm to 1000-nm and have clear route to > 85%. Proc. SPIE 6456, 64560M (2007).
H.X. Li, I. Chyr, X. Jin, F. Reinhardt, T. Towe, D. Brown, T. Nguyen, M. Berube, T. Truchan, D. Hu, R. Miller, R. Srinivasan, T. Crum, E. Wolak, R. Bullock, J. Mott, and J. Harrison: >700 W continuous-wave output power from single laser diode bar. Electron. Lett. 43, 1 (2007).
E. Kioupakis, P. Rinke, A. Schleife, F. Bechstedt, and C. Walle: Free-carrier absorption in nitrides from first principles. Phys. Rev. B 81, 241201 (2010).
M.T. Hardy, C.O. Holder, D.F. Feezell, S. Nakamura, J.S. Speck, D.A. Cohen, and S.P. DenBaars: Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes. Appl. Phys. Lett. 103, 081103 (2013).
C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N.M. Johnson: InAlGaN optical emitters - laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes. Proc. SPIE 7939, 793918 (2011).
J. Nedy, N. Young, K.M. Kelchner, Y. Hu, R.M. Farrell, S. Nakamura, S.P. DenBaars, C. Weisbuch, and J.S. Speck: Low damage dry etch for III-nitride light emitters. Semicond. Sci. Technol., in press. (2015).
A.C. Abare, M. Hansen, J.S. Speck, S.P. DenBaars, and L.A. Coldren: Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings. Electron. Lett. 35, 1559–1560 (1999).
D.F. Feezell, M.C. Schmidt, R.M. Farrell, K.-C. Kim, M. Saito, K. Fujito, D.A. Cohen, J.S. Speck, S.P. DenBaars, and S. Nakamura: AlGaN-cladding-free nonpolar InGaN/GaN laser diodes. Jpn. J. Appl. Phys. 46, L284–L286 (2007).
Y. Kawaguchi, S.-C. Huang, R.M. Farrell, Y. Zhao, J.S. Speck, S.P. DenBaars, and S. Nakamura: Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III-nitride light-emitting diodes. Appl. Phys. Express 6, 052103 (2013).
D. Sizov, R. Bhat, K. Song, D. Allen, B. Paddock, S. Coleman, L.C. Hughes, and C. Zah: 60 mW pulsed and continuous wave operation of GaN-based semipolar green laser with characteristic temperature of 190 K. Appl. Phys. Express 4, 102103 (2011).
J.J. Wierer, J.Y. Tsao, and D.S. Sizov: The potential of III-nitride laser diodes for solid-state lighting. Phys. Status Solidi 11, 674–677 (2014).
Y. Zhao, R.M. Farrell, Y.-R. Wu, and J.S. Speck: Valence band states and polarized optical emission from nonpolar and semipolar III - nitride quantum well optoelectronic devices. Jpn. J. Appl. Phys. 53, 100206 (2014).
K. Fujito, S. Kubo, and I. Fujimura: Development of Bulk GaN crystals and nonpolar/semipolar substrates by HVPE. MRS Bull. 34, 313–317 (2009).
K. Domen, K. Horino, A. Kuramata, and T. Tanahashi: Analysis of polarization anisotropy along the c axis in the photoluminescence of wurtzite GaN. Appl. Phys. Lett. 71, 1996–1998 (1997).
S.-H. Park: Crystal orientation effects on many-body optical gain of wurtzite InGaN/GaN quantum well lasers. Jpn. J. Appl. Phys. 42, L170–L172 (2003).
D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. Zah: Development of semipolar laser diode. Phys. Status Solidi 210, 459–465 (2013).
A. David, M.J. Grundmann, J.F. Kaeding, N.F. Gardner, T.G. Mihopoulos, and M.R. Krames: Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 92, 053502 (2008).
S.E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J.S. Speck, S. Nakamura, and S.P. DenBaars: Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes. Appl. Phys. Lett. 98, 011110 (2011).
H. Yamada, K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J.S. Speck, S.P. DenBaars, and S. Nakamura: Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates. Phys. Status Solidi 2, 89–91 (2008).
T. Melo, Y.L. Hu, C. Weisbuch, M.C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. Krames, and J. Raring: Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes. Semicond. Sci. Technol. 27, 024015 (2012).
K.M. Kelchner, L.Y. Kuritzky, K. Fujito, S. Nakamura, S.P. DenBaars, and J.S. Speck: Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates. J. Cryst. Growth 382, 80–86 (2013).
K.M. Kelchner, L.Y. Kuritzky, S. Nakamura, S.P. DenBaars, and J.S. Speck: Stable vicinal step orientations in m-plane GaN. J. Cryst. Growth 411, 56–62 (2015).
L.Y. Kuritzky, D.J. Myers, J. Nedy, K.M. Kelchner, S. Nakamura, S.P. DenBaars, C. Weisbuch, and J.S. Speck: Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates. Appl. Phys. Express 8, 061002 (2015).
A.M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F.A. Ponce: Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN. Appl. Phys. Express 2, 041002 (2009).
F. Wu, Y.-D. Lin, A. Chakraborty, H. Ohta, S.P. DenBaars, S. Nakamura, and J.S. Speck: Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN. Appl. Phys. Lett. 96, 231912 (2010).
Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P.S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C.G. Van de Walle, J.S. Speck, S.P. DenBaars, S. Nakamura, and D. Feezell: Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells. Appl. Phys. Lett. 100, 201108 (2012).
P.S. Hsu: Stress-relaxation in III-nitride based semipolar lasers. PhD dissertation, University of California, Santa Barbara (2013).
M.T. Hardy, E.C. Young, P. Shan Hsu, D.A. Haeger, I.L. Koslow, S. Nakamura, S.P. DenBaars, and J.S. Speck: Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20-21) InGaN/GaN heterostructures. Appl. Phys. Lett. 101, 132102 (2012).
K. Nishizuka, M. Funato, Y. Kawakami, S. Fujita, Y. Narukawa, and T. Mukai: Efficient radiative recombination from (11-22) -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique. Appl. Phys. Lett. 85, 3122–3124 (2004).
Y. Zhao, S. Tanaka, Q. Yan, C.Y. Huang, R.B. Chung, C.C. Pan, K. Fujito, D. Feezell, C.G. Van De Walle, J.S. Speck, S.P. Denbaars, and S. Nakamura: High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes. Appl. Phys. Lett. 99, 051109 (2011).
L. Megalini, D.L. Becerra, R.M. Farrell, A. Pourhashemi, J.S. Speck, S. Nakamura, S.P. Denbaars, and D.A. Cohen: Continuous-wave operation of a (20-2-1) InGaN laser diode with a photoelectrochemically etched current aperture. Appl. Phys. Express 8, 042701 (2015).
F. Wu, Y. Zhao, A. Romanov, S.P. DenBaars, S. Nakamura, and J.S. Speck: Stacking faults and interface roughening in semipolar (20-2-1) single InGaN quantum wells for long wavelength emission. Appl. Phys. Lett. 104, 151901 (2014).
D.F. Feezell, M.C. Schmidt, S.P. DenBaars, and S. Nakamura: Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes. MRS Bull. 34, 318–323 (2009).
T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.I. Nagahama, and T. Mukai: InGaN-based 518 and 488 nm laser diodes on c-plane GaN substrate. Phys. Status Solidi 207, 1389–1392 (2010).
S. Lutgen, A. Avramescu, T. Lermer, D. Queren, J. Müller, G. Bruederl, and U. Strauss: True green InGaN laser diodes. Phys. Status Solidi 207, 1318–1322 (2010).
A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss: True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN. Appl. Phys. Express 3, 061003 (2010).
J.W. Raring, E.M. Hall, M.C. Schmidt, C. Poblenz, B. Li, N. Pfister, D.F. Feezell, R. Craig, J.S. Speck, S.P. DenBaars, and S. Nakamura: High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes. Proc. SPIE 7602, 760218 (2010).
M. Adachi, Y. Yoshizumi, Y. Enya, T. Kyono, T. Sumitomo, S. Tokuyama, S. Takagi, K. Sumiyoshi, N. Saga, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura: Low threshold current density InGaN based 520-530 nm green laser diodes on semi-polar 20-21 free-standing GaN substrates. Appl. Phys. Express 3, 121001 (2010).
K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura: Long-lifetime true green laser diodes with output power over 50 mW above 525 nm grown on semipolar 20-21 GaN substrates. Appl. Phys. Express 5, 082103 (2012).
A. Avramescu, T. Lermer, J. Müller, S. Tautz, D. Queren, S. Lutgen, and U. Strauss: InGaN laser diodes with 50 mW output power emitting at 515 nm. Appl. Phys. Lett. 95, 071103 (2009).
A. Tyagi, M.R. Farrell, K.M. Kelchner, C.Y. Huang, P.S. Hsu, D.A. Haeger, M.T. Hardy, C. Holder, K. Fujito, D.A. Cohen, H. Ohta, J.S. Speck, S.P. DenBaars, and S. Nakamura: AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm. Appl. Phys. Express 3, 011002 (2010).
Y.-D. Lin, S. Yamamoto, C.Y. Huang, C.L. Hsiung, F. Wu, K. Fujito, H. Ohta, J.S. Speck, S.P. Denbaars, and S. Nakamura: High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes. Appl. Phys. Express 3, 082001 (2010).
M.T. Hardy, F. Wu, P. Shan Hsu, D.A. Haeger, S. Nakamura, J.S. Speck, and S.P. DenBaars: True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy. J. Appl. Phys. 114, 183101 (2013).
S. Masui, T. Miyoshi, T. Yanamoto, and S. Nagahama: 1 W AlInGaN based green laser diodes. In Conf. Lasers Electro-Optics Pacific Rim, 2013; pp. 1-2.
Y. Zhao, Q. Yan, D. Feezell, K. Fujito, C.G. Van De Walle, J.S. Speck, S.P. Denbaars, and S. Nakamura: Optical polarization characteristics of semipolar (30-31) and (30-3-1) InGaN/GaN light-emitting diodes. Opt. Express 21, A53–A59 (2013).
P.S. Hsu, E.C. Young, A.E. Romanov, K. Fujito, S.P. DenBaars, S. Nakamura, and J.S. Speck: Misfit dislocation formation via pre-existing threading dislocation glide in (11-22) semipolar heteroepitaxy. Appl. Phys. Lett. 99, 081912 (2011).
P.S. Hsu, M.T. Hardy, E.C. Young, A.E. Romanov, S.P. DenBaars, S. Nakamura, and J.S. Speck: Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy. Appl. Phys. Lett. 100, 171917 (2012).
F. Wu, E.C. Young, I. Koslow, M.T. Hardy, P.S. Hsu, A.E. Romanov, S. Nakamura, S.P. DenBaars, and J.S. Speck: Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures. Appl. Phys. Lett. 99, 251909 (2011).
P.S. Hsu, M.T. Hardy, F. Wu, I. Koslow, E.C. Young, A.E. Romanov, K. Fujito, D.F. Feezell, S.P. DenBaars, J.S. Speck, and S. Nakamura: 444.9 nm semipolar (11-22) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer. Appl. Phys. Lett. 100, 021104 (2012).
M.T. Hardy, S. Nakamura, J.S. Speck, and S.P. DenBaars: Suppression of relaxation in (20-21) InGaN/GaN laser diodes using limited area epitaxy. Appl. Phys. Lett. 101, 241112 (2012).
P.S. Hsu, F. Wu, E.C. Young, A.E. Romanov, K. Fujito, S.P. DenBaars, J.S. Speck, and S. Nakamura: Blue and aquamarine stress-relaxed semipolar (11-22) laser diodes. Appl. Phys. Lett. 103, 161117 (2013).
J.E. Short: How much media? 2013 Report on American consumers, 2013.
J. Grubor, S. Randel, K.-D. Langer, and J.W. Walewski: Broadband information broadcasting using LED-based interior lighting. J. Lightw. Technol. 26, 3883–3892 (2008).
J.J.D. Mckendry, D. Massoubre, S. Zhang, B.R. Rae, R.P. Green, E. Gu, R.K. Henderson, A.E. Kelly, and M.D. Dawson: Visible-light communications using a CMOS-controlled micro-light emitting-diode array. J. Lightw. Technol. 30, 61–67 (2012).
D. Tsonev, H. Chun, S. Rajbhandari, J.J.D. McKendry, S. Videv, E. Gu, M. Haji, S. Watson, A.E. Kelly, G. Faulkner, M.D. Dawson, H. Haas, and D. O’Brien: A 3-Gb/s single-LED OFDM-based wireless VLC link using a gallium nitride μLED. IEEE Photonics Technol. Lett. 26, 637–640 (2014).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku: Optical gain and carrier lifetime of InGaN multiquantum well structure laser diodes. Appl. Phys. Lett. 69, 1568 (1996).
S. Watson, M. Tan, S.P. Najda, P. Perlin, M. Leszczynski, G. Targowski, S. Grzanka, and A. Kelly: Visible light communications using a directly modulated 422 nm GaN laser diode. Opt. Lett. 38, 3792–3794 (2013).
C. Lee, C. Zhang, M. Cantore, R.M. Farrell, S. Oh, T. Margalith, J.S. Speck, S. Nakamura, J.E. Bowers, and S.P. DenBaars: 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Opt. Express 23, 16232–16237 (2015).
L. Grobe, A. Paraskevopoulos, J. Hilt, D. Schulz, F. Lassak, F. Hartlieb, C. Kottke, V. Jungnickel, and K.-D. Langer: High-speed visible light communication systems. IEEE Commun. Mag., December, 60–66 (2013).
A. Neumann, J.J. Wierer, W. Davis, Y. Ohno, S.R.J. Brueck, and J.Y. Tsao: Four-color laser white illuminant demonstrating high color-rendering quality. Opt. Express 19, A982–A990 (2011).
E.F. Schubert and J.K. Kim: Solid-state light sources getting smart. Science 308, 1274–1279 (2005).
D.M. Berson, F.A. Dunn, and M. Takao: Phototransduction by retinal ganglion cells that set the circadian clock. Science 295, 1070–1073 (2002).
S. Hattar, H.W. Liao, M. Takao, D.M. Berson, and K.W. Yau: Melanopsin-containing retinal ganglion cells: Architecture, projections, and intrinsic photosensitivity. Science 295, 1065–1070 (2002).
G.C. Brainard, D. Sliney, J.P. Hanifin, G. Glickman, B. Byrne, J.M. Greeson, S. Jasser, E. Gerner, and M.D. Rollag: Sensitivity of the human circadian system to short wavelength (420 nm) light. J. Biol. Rhythms 23, 379–386 (2008).
A.M. Vosko, C.S. Colwell, and A.Y. Avidan: Jet lag syndrome: Circadian organization, pathophysiology, and management strategies. Nat. Sci. Sleep 2, 187–198 (2010).
Acknowledgments
We acknowledge funding from the Solid State Lighting and Energy Electronics Center at UCSB. We thank Joseph Nedy for his careful reading of this manuscript and his helpful comments. L. K. acknowledges an NSF Graduate Research Fellowship under Grant No. DGE-1144085.
Author information
Authors and Affiliations
Corresponding author
Additional information
This author was a member of the Advisory Board of this journal during the review and decision stage. Advisory Board members do not sit on the editorial board, and so fall under the “Non-Editors” section of the Materials Research Society policy on review and publication of manuscripts to be found at http://www.mrs.org/editor-manuscripts/.
Rights and permissions
About this article
Cite this article
Kuritzky, L.Y., Speck, J.S. Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN. MRS Communications 5, 463–473 (2015). https://doi.org/10.1557/mrc.2015.53
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/mrc.2015.53