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Peak shape analysis of deep level transient spectra: An alternative to the Arrhenius plot

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Abstract

A new deep level transient spectroscopy (DLTS) technique is described, called half-width at variable intensity analysis. This method utilizes the width and normalized intensity of a DLTS signal to determine the activation energy and capture cross section of the trap that generated the signal via a variable, kO. This constant relates the carrier emission rates giving rise to the differential capacitance signal associated with a given trap at two different temperatures: the temperature at which the maximum differential capacitance is detected, and an arbitrary temperature at which some nonzero differential capacitance signal is detected. The extracted activation energy of the detected trap center is used along with the position of the peak maximum to extract the capture cross section of the trap center.

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Acknowledgments

The authors acknowledge Corning, Inc., for funding this research and for the use of their DLTS system. The Semiconductor and Microsystem Fabrication Laboratory at Rochester Institute of Technology is acknowledged for use of their facilities in generating the sample used for analysis in this study.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida, 32611-6400, USA

    Patrick G. Whiting & Kevin S. Jones

  2. Department of Electrical Engineering, Rochester Institute of Technology, Henrietta, New York, 14623, USA

    Karl D. Hirschman

  3. Sullivan Park Science and Technology Center, Corning Incorporated, Erwin, New York, 14870, USA

    Jayantha Senawiratne, Johannes Moll, Robert G. Manley, J. Gregory Couillard & Carlo A. Kosik Williams

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  1. Patrick G. Whiting
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  2. Kevin S. Jones
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Correspondence to Patrick G. Whiting.

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Whiting, P.G., Jones, K.S., Hirschman, K.D. et al. Peak shape analysis of deep level transient spectra: An alternative to the Arrhenius plot. Journal of Materials Research 34, 1654–1668 (2019). https://doi.org/10.1557/jmr.2019.70

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  • DOI: https://doi.org/10.1557/jmr.2019.70

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