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Cumulative shear strain–induced preferential orientation during abnormal grain growth near fatigue crack tips of nanocrystalline Au films

  • Nanomechanics and Testing
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Abstract

A detailed electron backscatter diffraction (EBSD) characterization was utilized to investigate abnormal grain growth behavior of nanocrystalline (NC) Au films constrained by a flexible substrate under cyclic loading. Abnormally grown grains (AGGs) in front of about 15 fatigue cracks were picked out to investigate the grain reorientation behavior during abnormal grain growth in the fatigue crack tip in the cyclically deformed thin films. It shows that the AGGs exhibited 〈001〉 orientation along the loading direction, whereas grains grown far away from fatigue cracks had no significant texture change. The cyclic cumulative shear strain was found to play a key role in grain reorientation. A lattice rotation model was proposed to elucidate the grain reorientation mechanism during abnormal grain growth. Such grain reorientation behavior of NC metals was found to provide an intrinsic resistance of the NC metals to fatigue damage.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (NSFC, Grant Nos. 51601198 and 51571199) and partially be NSFC (Grant Nos. 51771207) and Natural Science Foundation of Liaoning Province of China (Grant No. 20180510025).

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Authors and Affiliations

  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

    Si-Xue Zheng, Xue-Mei Luo & Guang-Ping Zhang

  2. School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China

    Si-Xue Zheng

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  1. Si-Xue Zheng
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Correspondence to Xue-Mei Luo or Guang-Ping Zhang.

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Zheng, SX., Luo, XM. & Zhang, GP. Cumulative shear strain–induced preferential orientation during abnormal grain growth near fatigue crack tips of nanocrystalline Au films. Journal of Materials Research 35, 372–379 (2020). https://doi.org/10.1557/jmr.2019.409

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