Abstract
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tetrakis(dimethylamido)zirconium(IV) and water. We investigated the growth characteristics and mechanism of the ALD ZrO2 in the temperature range of 50–275 °C. Furthermore, the evolutions of film thickness and morphology were studied and discussed. It was found that the growth rate of ZrO2 decreased almost linearly with the increasing temperature from ∼1.81 Å/cycle at 50 °C to ∼0.8 Å/cycle at 225 °C. Interestingly, it was revealed that the growth of ZrO2 films ceased after a certain number of ALD cycles at a temperature higher than 250 °C. We also verified that the crystallinity of ZrO2 evolved with deposition temperature from amorphous to crystalline phase. In addition, the wettability of ZrO2 films was studied, showing a hydrophobic nature.
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Acknowledgment
Funding for this research was provided by the Center for Advanced Surface Engineering, under the National Science Foundation Grant No. OIA-1457888 and the Arkansas EPSCoR Program, ASSET III. Portions of this work were performed at GeoSoilEnviroCARS (the University of Chicago, Sector 13), APS, Argonne National Laboratory. GeoSoilEnviroCARS is supported by the National Science Foundation—Earth Sciences (EAR—1634415) and Department of Energy-GeoSciences (DE-FG02-94ER14466). This research used resources of the APS, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. We appreciate the assistance provided by Professor Peter Eng (Research Professor, CARS and JFI, University of Chicago) at the University of Chicago.
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Wang, X., Ghosh, S.K., Afshar-Mohajer, M. et al. Atomic layer deposition of zirconium oxide thin films. Journal of Materials Research 35, 804–812 (2020). https://doi.org/10.1557/jmr.2019.338
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DOI: https://doi.org/10.1557/jmr.2019.338