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Simulation studies of Sn-based perovskites with Cu back-contact for non-toxic and non-corrosive devices

Journal of Materials Research volume 34, pages 2789–2795 (2019)Cite this article

Abstract

Using general-purpose photovoltaic device model, we have simulated the operation and functionality of a working Sn perovskite/Cu2O hole transport layer (HTL)/Cu back-contact device versus a standard Pb perovskite/Spiro HTL/Ag back-contact device. The results are extremely promising in that they showcase comparable cell efficiencies, with the Sn perovskite/Cu2O HTL/Cu back-contact device showing a highest 22.9% efficiency [Jsc of 353.4 A/m2, Voc of 0.84 V, fill factor (FF) of 0.77] at 427 nm active layer thickness compared with 24.6% of the standard Pb perovskite/Spiro HTL/Ag back-contact device (Jsc of 356.8 A/m2, Voc of 0.82 V, FF of 0.84) at the same active layer thickness. Jsc, Voc, and FF kinetics reveal that the Sn perovskite/Cu2O HTL/Cu back-contact device can perform better by reducing the recombination centers both within each layer matrix and in the interfacial contacts.

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Acknowledgments

This work was supported by the Clean Energy Grant from SUNY Buffalo State.

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Authors and Affiliations

  1. Department of Mechanical Engineering Technology, SUNY — Buffalo State, Buffalo, New York, 14222, USA

    Saquib Ahmed, Jon Shaffer & Mohan Devgun

  2. Department of Mechanical Engineering, California State University — Fresno, Fresno, California, 93740, USA

    Jalen Harris & Sankha Banerjee

  3. Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon, 97201, USA

    Shaestagir Chowdhury

  4. Center for Advanced Materials, Qatar University, Doha, Qatar

    Aboubakr Abdullah

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  1. Saquib Ahmed
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  2. Jalen Harris
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Correspondence to Saquib Ahmed.

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Ahmed, S., Harris, J., Shaffer, J. et al. Simulation studies of Sn-based perovskites with Cu back-contact for non-toxic and non-corrosive devices. Journal of Materials Research 34, 2789–2795 (2019). https://doi.org/10.1557/jmr.2019.204

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  • DOI: https://doi.org/10.1557/jmr.2019.204