Abstract
The topological insulator/superconductor heterostructure is one of the most promising platforms to create and manipulate Majorana bound states. Here, we used molecular beam epitaxy to grow high-quality (Bi0.5Sb0.5)2Te3 films on Nb surfaces. To promote proper (Bi0.5Sb0.5)2Te3 film nucleation in the early growth stage, we developed a two-step growth method. Bi, Sb, and Te clusters were first evaporated at a low temperature of 180 °C, which is below the typical growth temperature and then annealed to form a crystalized passivation layer. Second, a standard (Bi0.5Sb0.5)2Te3 film was grown under the normal deposition temperature of 280 °C. We used reflection high-energy electron diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction to further characterize the (Bi0.5Sb0.5)2Te3 film and passivation layer quality. Finally, the top Nb film was laid down by magnetron sputtering at room temperature. The hetero-Nb/epitaxial (Bi0.5Sb0.5)2Te3/Nb stacks were further fabricated into micro-Josephson junctions and showed clear Josephson currents demonstrating an excellent material quality.
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ACKNOWLEDGMENTS
This work was supported by Natural Sciences and Engineering Research Council of Canada (NSERC) Discovery Grant Nos. RGPIN-418415 and RGPIN-04178, Ontario Early Researcher Award (ERA), the Canada First Research Excellence Fund, Chinese Academy of Science Pioneer Hundred Talents Program, and the Union funding of National Synchrotron Radiation Laboratory of China. The infrastructure would not be possible without the significant contributions of the Quantum Valley Investments, the Canada Foundation for Innovation, the Ontario Ministry of Research & Innovation, and Industry Canada.
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Supplementary Material: Title: Two-Step Growth of High Quality Nb/(Bi0.5Sb0.5)2Te3/Nb Heterostructures for Topological Josephson Junctions (approximately 145 KB)
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Zhang, H., Ma, X., Li, L. et al. Two-step growth of high-quality Nb/(Bi0.5Sb0.5)2Te3/Nb heterostructures for topological Josephson junctions. Journal of Materials Research 33, 2423–2433 (2018). https://doi.org/10.1557/jmr.2018.195
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DOI: https://doi.org/10.1557/jmr.2018.195