Abstract
We describe the main experimental challenges toward the metrological calibration of photodetectors based on single semiconductor nanowires, and we propose a method for the quantification of their photoresponse, focusing in particular on GaAs nanowires. Spatially resolved measurements of the device’s photocurrent were performed with a far-field scanning optical setup and a laser excitation at λ = 656 nm. The photoresponse was quantitatively described by fitting the two-dimensional mapping of the photocurrent at different positions along the main nanowire axis. Our results indicate that the device’s photoresponse strongly depends on the position along the nanowire, which is attributed to the inhomogeneous properties of the device’s contacts. Furthermore, we show that its spatial profile across the nanowire can be directly compared with the profile of the laser beam by taking into account the angle between the scanning direction and the main nanowire axis as a geometrical factor. Finally, we discuss the impacts of laser-induced heating effects on the calibration of such nanoscale devices.
Similar content being viewed by others
References
C.M. Lieber: Semiconductor nanowires: A platform for nanoscience and nanotechnology. MRS Bull. 36, 1052 (2011).
B. Tian, X. Zheng, T.J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang, and C.M. Lieber: Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature 449, 885 (2007).
C. Colombo, M. Heibeta, M. Gratzel, and A. Fontcuberta i Morral: Gallium arsenide p–i–n radial structures for photovoltaic applications. Appl. Phys. Lett. 94, 173108 (2009).
Y. Huang, X. Duan, and C.M. Lieber: Nanowires for integratedmulticolor nanophotonics. Small 1, 142 (2005).
J. Bao, M. Zimmler, F. Capasso, X. Wang, and Z. Ren: Broadband ZnO single-nanowire light-emitting diode. Nano Lett. 6, 1719 (2006).
O. Hayden, A. Greytak, and D. Bell: Core–shell nanowire light emitting diodes. Adv. Mater 17, 701 (2006).
C. Soci, A. Zhang, X-Y. Bao, H. Kim, Y. Lo, and D. Wang: Nanowire photodetectors. J. Nanosci. Nanotechnol. 10, 1430 (2010).
O. Hayden, R. Agarwal, and C.M. Lieber: Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection. Nat. Mater. 5, 352 (2006).
H. Kind, H. Yan, B. Messer, M. Law, and P. Yang: Nanowire ultraviolet photodetectors and optical switches. Adv. Mater. 14, 158 (2002).
X. Chen, C.K.Y. Wong, C.A. Yuan, and G. Zhang: Nanowire-based gas sensors. Sens. Actuators, B 177, 178 (2013).
E. Comini, C. Baratto, G. Faglia, M. Ferroni, A. Ponzoni, D. Zappa, and G. Sberveglieri: Metal oxide nanowire chemical and biochemical sensors. J. Mater. Res. 28, 2911 (2013).
X. Duan, Y. Huang, Y. Cui, J. Wang, and C.M. Lieber: Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409, 66 (2001).
R. Yan, D. Gargas, and P. Yang: Nanowire photonics. Nat. Photonics 3, 569 (2009).
T. Voss, G.T. Svacha, E. Mazur, S. Müller, C. Ronning, D. Konjhodzic, and F. Marlow: High-order waveguide modes in zno nanowires. Nano Lett. 7, 3675 (2007).
R. Röder, M. Wille, S. Geburt, J. Rensberg, M. Zhang, J.G. Lu, F. Capasso, R. Buschlinger, U. Peschel, and C. Ronning: Continuous wave nanowire lasing. Nano Lett. 13, 3602 (2013).
C.A. Richter, H.D. Xiong, X. Zhu, W. Wang, V.M. Stanford, W-K. Hong, T. Lee, D.E. Ioannou, and Q. Li: Metrology for the electrical characterization of semiconductor nanowires. IEEE Trans. Electron Devices 55, 3086 (2008).
J.A. Dagata, C.A. Richter, R.M. Silver, E.M. Vogel, and J.V. Martinez de Pinillos: Metrology development for the nanoelectronics industry at the national institute for standards and technology. NSTI-Nanotech 2004, 3 (2004). Available at: www.nsti.org, ISBN 0-9728422-9-2.
J.D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. Ramon Morante, S. Barth, and S. Mathur: Toward a systematic understanding of photodetectors based on individual metal oxide nanowires. J. Phys. Chem. C 112, 14639 (2008).
J. Boland, S. Conesa-Boj, P. Parkinson, G. Tütüncüoglu, F. Matteini, D. Ruffer, C.A.A. Amaduzzi, F. Jabeen, C. Davies, H. Joyce, A. Fontcuberta i Morral, and M. Johnston: Modulation doping of GaAs/AlGaAs core–shell nanowires with effective defect passivation and high electron mobility. Nano Lett. 15, 1336 (2015).
F. Matteini, G. Tütüncüoglu, D. Mikulik, J. Vukajlovic-Plestina, H. Potts, J.B. Leran, W.C. Carter, and A. Fontcuberta i Morral: Impact of the Ga droplet wetting, morphology, and pinholes on the orientation of GaAs nanowires. Cryst. Growth Des. 16, 5781 (2016).
E. Russo-Averchi, M. Heiss, L. Michelet, P. Krogstrup, J. Nygard, C. Magen, J.R. Morante, E. Uccelli, J. Arbiol, and A. Fontcuberta i Morral: Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon. Nanoscale 4, 1486 (2012).
A. Casadei, E. Alarcon Llado, F. Amaduzzi, E. Russo-Averchi, D. Rüffer, M. Heissm, L. Dal Negro, and A. Fontcuberta i Morral: Polarization response of nanowires à la carte. Sci. Rep. 7, 7651 (2015).
Online source: NCCR “QSIT—Quantum Science and Technology”: Automated e-Beam (2014). Available at: http://www.nccr-qsit.ethz.ch/technology-transfer/qstarter/current-projects/automated-e-beam.html.
P. Blanc, M. Heiss, C. Colombo, A.D. Mallorquì, T.S. Safaei, P. Krogstrup, J. Nygård, and A. Fontcuberta i Morral: Electrical contacts to single nanowires: A scalable method allowing multiple devices on a chip. Application to a single nanowire radial p–i–n junction. Int. J. Nanotechnol. 10, 419 (2013).
C. Gutsche, A. Lysov, I. Regolin, and A. Brodt: Ohmic contacts to n-GaAs nanowires. J. Appl. Phys. 110, 014305 (2011).
B. Rodiek, M. Lopez, H. Hofer, G. Porrovecchio, M. Smid, X.L. Chu, S. Gotzinger, V. Sandoghdar, S. Lindner, C. Becher, and S. Kück: Experimental realization of an absolute single-photon source based on a single nitrogen vacancy center in a nanodiamond. Optica 4, 71 (2017).
Y. Gu, E-S. Kwak, J.L. Lensch, J.E. Allen, T.W. Odom, and L.J. Lauhon: Near-field scanning photocurrent microscopy of a nanowire photodetector. Appl. Phys. Lett. 87, 043111 (2005).
S. Thunich, L. Prechtel, D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral, and A. Holleitner: Photocurrent and photoconductance properties of a GaAs nanowire. Appl. Phys. Lett. 95, 083111 (2009).
C.J. Chunnilall, I.P. Degiovanni, S. Kück, I. Müller, and A.G. Sinclair: Metrology of single-photon sources and detectors: A review. Opt. Eng. 53, 081910 (2014).
ACKNOWLEDGMENTS
We gratefully acknowledge Gözde Tütüncüoglu, Nicholas G. Morgan, Martin Friedl and Anna Fontcuberta i Morral (Laboratory of Semiconductor Materials of the École Polytechnique Fédérale de Lausanne) for sample preparation and comments on the manuscript. Furthermore, we gratefully acknowledge support of the Braunschweig International Graduate School of Metrology B-IGSM and the DFG Research Training Group GrK1952/1 “Metrology for complex Nanosystems” as well as that of the DFG-funded research group FOR1616 (project Vo 1265/6-2).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Cammi, D., Rodiek, B., Zimmermann, K. et al. Toward a metrological calibration of the conversion efficiency in GaAs nanowire-based photodetectors. Journal of Materials Research 32, 2464–2470 (2017). https://doi.org/10.1557/jmr.2017.225
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/jmr.2017.225