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Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

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Abstract

The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temperatures. We find an energy density threshold above which irreversible modifications of the structures take place, which leads to a decrease of the luminescence intensity and a change in the intensity ratio of the GaN to the InGaN luminescence. Due to the quantum confined Stark effect, a biexponential decay characteristic is found in the planar structure, while the 3D microrods with nonpolar InGaN quantum wells on their sidewalls show a monoexponential decay of the InGaN luminescence. For both structures, the decay of the luminescence becomes faster with increasing energy density per pulse. However, the luminescence of the planar LED decays faster with increasing temperature, while the opposite trend is found for the 3D sample.

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ACKNOWLEDGMENTS

This work has been supported by the DFG within the research unit FOR1616. The samples were grown by the team of the Epitaxy Competence Center ec2, Braunschweig. We acknowledge the technical assistance of A. Heidemann and K-H. Lachmund.

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Authors and Affiliations

  1. Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092, Braunschweig, Germany

    Angelina Vogt, Jana Hartmann, Hao Zhou, Matin Sadat Mohajerani, Sönke Fündling, Barbara Szafranski, Hergo-Heinrich Wehmann, Andreas Waag & Tobias Voss

  2. OSRAM Opto Semiconductors GmbH, 93055, Regensburg, Germany

    Tilman Schimpke, Adrian Avramescu & Martin Strassburg

Authors
  1. Angelina Vogt
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  2. Jana Hartmann
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  3. Hao Zhou
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  4. Matin Sadat Mohajerani
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  5. Sönke Fündling
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  7. Hergo-Heinrich Wehmann
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  8. Andreas Waag
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  12. Martin Strassburg
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Correspondence to Angelina Vogt.

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Vogt, A., Hartmann, J., Zhou, H. et al. Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures. Journal of Materials Research 32, 2456–2463 (2017). https://doi.org/10.1557/jmr.2017.212

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